Thu, Jul 26 PM
13:30 - 16:40 |
| (1) |
13:30-13:55 |
Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs |
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) |
| (2) |
13:55-14:20 |
Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET |
Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.) |
| (3) |
14:20-14:45 |
Temperature dependence of frequency dispersion in $C$-$V$ characteristics of AlN/AlGaN/GaN MIS-HFET |
Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) |
| |
14:45-15:00 |
Break ( 15 min. ) |
| (4) |
15:00-15:25 |
Interface characterization of AlInN/GaN heterostructures |
Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) |
| (5) |
15:25-15:50 |
Effect of ICP Etching on p-type GaN Schottky Contacts |
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) |
| (6) |
15:50-16:15 |
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts |
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) |
| (7) |
16:15-16:40 |
Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model |
Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.) |
Fri, Jul 27 AM
09:30 - 12:15 |
| (8) |
09:30-09:55 |
Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method |
Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) |
| (9) |
09:55-10:20 |
Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency |
Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) |
| (10) |
10:20-10:45 |
Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas |
Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (11) |
11:00-11:25 |
Study on Synchronized Charge Transfer and Efficiency in GaAs-based Etched Nanowire CCD |
Yuki Nakano, Takayuki Tanaka, Seiya Kasai (Hokkaido Univ.) |
| (12) |
11:25-11:50 |
Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration |
Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST) |
| (13) |
11:50-12:15 |
Graphene FET with Diamondlike Carbon Dielectrics |
Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) |
: 
t
zo
c