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Technical Committee on Electron Device (ED)
Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.)
Secretary: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)
Assistant: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)

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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

DATE:
Wed, Feb 27, 2013 13:30 - 17:45
Thu, Feb 28, 2013 09:00 - 12:10

PLACE:
Centennial Hall, Hokkaido University(N9, W6, Sapporo 060-0809, Japan. 10-min walk from JR Sapporo Station. http://www.hokudai.ac.jp/introduction/campus/100th/. Dr. Seiya Kasai. +81-11-706-3211 (Hall))

TOPICS:
Functional nanodevices and related technologies

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Wed, Feb 27 PM (13:30 - 17:45)
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(1) 13:30 - 14:10
[Invited Talk]
Ballistic transport and photovoltaic effect in graphene/h-BN
Tomoki Machida (Univ. of Tokyo/JST), Satoru Masubuchi, Masahiro Onuki, Kazuyuki Iguchi, Sei Morikawa, Takehiro Yamaguchi, Miho Arai (Univ. of Tokyo), Kenji Watanabe, Takashi Taniguchi (NIMS)

(2) 14:10 - 14:35
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS)

(3) 14:35 - 15:00
Fabrication of Cu2O/TiO2 heterojunction solar cells by electrochemical deposition and electrophoresis
Yoshihito Kato, Masaya Ichimura (Nagoya Inst. of Tech.)

(4) 15:00 - 15:25
possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation
Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.)

----- Break ( 15 min. ) -----

(5) 15:40 - 16:05
Individual Dopant Nature in Si Lateral Nano-pn Junctions
Sri Purwiyanti, Arief Udhiarto (Shizuoka Univ./Univ. Indonesia), Roland Nowak (Shizuoka Univ./Warsaw Univ. of Tech.), Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Djoko Hartanto (Univ. Indonesia), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.)

(6) 16:05 - 16:30
Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.)

(7) 16:30 - 16:55
Fabrication of Graphene-based Three-branch Nano-junction (TBJ) and Its Application to Logic Circuits
Xiang Yin, Seiya Kasai (Hokkaido Univ.)

(8) 16:55 - 17:20
Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.)

(9) 17:20 - 17:45
Field-Assisted Self -Assembly Process of InAs nanowires
Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.)

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Thu, Feb 28 AM (09:00 - 12:10)
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(10) 09:00 - 09:25
Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature
Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)

(11) 09:25 - 09:50
Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ)

(12) 09:50 - 10:15
Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices
Yoshinao Mizugaki (Univ. of Electro- Comm.)

(13) 10:15 - 10:40
Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island
Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.)

----- Break ( 15 min. ) -----

(14) 10:55 - 11:20
Surface Modification of Graphene by Scanning Probe Microscopy Scratch Nanolithography
Ryutaro Suda, Takanari Saito, Taku Yoshida (Tokyo Univ. of Agriculture and Tech.), Ampere A. Tseng (Arizona State Univ.), Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.)

(15) 11:20 - 11:45
In-Situ Temperature Measurements of Joule-Heated Graphene Using Near-Infrared CCD Imaging System
Takanari Saito, Ibuki Atsumo, Ryutaro Suda, Mitsuki Ito, Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.)

(16) 11:45 - 12:10
Electrical Properties of Carbon Fibers Embedded with CNTs
Takehito Watanuki, Tomo Tanaka, Eiichi Sano, Bunshi Fugetsu (Hokkaido Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 35 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Apr 18, 2013 - Fri, Apr 19, 2013: [Sat, Feb 16], Topics: Organic Devices, Oxide Devices, and others
Thu, May 16, 2013 - Fri, May 17, 2013: Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. [Thu, Mar 14], Topics: Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials)

# SECRETARY:
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E-mail :

Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-mail：

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Apr 25, 2013 - Fri, Apr 26, 2013: Yakusima Environmental Culture Village Center [Sun, Feb 17], Topics: Advanced Thin-Film Devices (Si, Compound, Organic), biotechnology, Materials, Measurement Technique and Related Topics
Thu, May 16, 2013 - Fri, May 17, 2013: Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. [Thu, Mar 14], Topics: Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials)

# SECRETARY:
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-mail: o