Wed, Feb 27 PM
13:30 - 17:45 |
| (1) |
13:30-14:10 |
[Invited Talk]
Ballistic transport and photovoltaic effect in graphene/h-BN |
Tomoki Machida (Univ. of Tokyo/JST), Satoru Masubuchi, Masahiro Onuki, Kazuyuki Iguchi, Sei Morikawa, Takehiro Yamaguchi, Miho Arai (Univ. of Tokyo), Kenji Watanabe, Takashi Taniguchi (NIMS) |
| (2) |
14:10-14:35 |
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers |
Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS) |
| (3) |
14:35-15:00 |
Fabrication of Cu2O/TiO2 heterojunction solar cells by electrochemical deposition and electrophoresis |
Yoshihito Kato, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (4) |
15:00-15:25 |
possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation |
Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) |
| |
15:25-15:40 |
Break ( 15 min. ) |
| (5) |
15:40-16:05 |
Individual Dopant Nature in Si Lateral Nano-pn Junctions |
Sri Purwiyanti, Arief Udhiarto (Shizuoka Univ./Univ. Indonesia), Roland Nowak (Shizuoka Univ./Warsaw Univ. of Tech.), Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Djoko Hartanto (Univ. Indonesia), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) |
| (6) |
16:05-16:30 |
Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications |
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) |
| (7) |
16:30-16:55 |
Fabrication of Graphene-based Three-branch Nano-junction (TBJ) and Its Application to Logic Circuits |
Xiang Yin, Seiya Kasai (Hokkaido Univ.) |
| (8) |
16:55-17:20 |
Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate |
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) |
| (9) |
17:20-17:45 |
Field-Assisted Self -Assembly Process of InAs nanowires |
Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) |
Thu, Feb 28 AM
09:00 - 12:10 |
| (10) |
09:00-09:25 |
Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature |
Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) |
| (11) |
09:25-09:50 |
Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot |
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) |
| (12) |
09:50-10:15 |
Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices |
Yoshinao Mizugaki (Univ. of Electro- Comm.) |
| (13) |
10:15-10:40 |
Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island |
Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.) |
| |
10:40-10:55 |
Break ( 15 min. ) |
| (14) |
10:55-11:20 |
Surface Modification of Graphene by Scanning Probe Microscopy Scratch Nanolithography |
Ryutaro Suda, Takanari Saito, Taku Yoshida (Tokyo Univ. of Agriculture and Tech.), Ampere A. Tseng (Arizona State Univ.), Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.) |
| (15) |
11:20-11:45 |
In-Situ Temperature Measurements of Joule-Heated Graphene Using Near-Infrared CCD Imaging System |
Takanari Saito, Ibuki Atsumo, Ryutaro Suda, Mitsuki Ito, Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.) |
| (16) |
11:45-12:10 |
Electrical Properties of Carbon Fibers Embedded with CNTs |
Takehito Watanuki, Tomo Tanaka, Eiichi Sano, Bunshi Fugetsu (Hokkaido Univ.) |
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