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=============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Hiroyuki Tsuda (Keio Univ.) Vice Chair: Shinji Matsuo (NTT) Secretary: Kazunori Shinoda (Hitachi), Yu Tanaka (Fujitsu Labs.) =============================================== Technical Committee on Electron Device (ED) Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.) Secretary: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic) Assistant: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.) Secretary: Koji Enbutsu (NTT), Katsuya Abe (Shinshu Univ.) Assistant: Junichi Kodate (NTT), Tomomasa Sato (Kanagawa Univ.) DATE: Thu, Nov 29, 2012 10:00 - 16:40 Fri, Nov 30, 2012 09:30 - 17:40 PLACE: Osaka City University Media Center(3-3-138 Sugimoto-cho, Sumiyoshi-ku, Osaka-shi, 558-8585 Osaka, Japan. http://www.osaka-cu.ac.jp/en/about/access. Prof. Naoteru Shigekawa. +81-6-6605-2676) TOPICS: Ｎｉｔｒide and Compound Semiconductor Devices ---------------------------------------- Thu, Nov 29 AM (10:00 - 16:40) ---------------------------------------- (1) 10:00 - 10:25 Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.), Eiji Higurashi (Univ. Tokyo) (2) 10:25 - 10:50 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ----- Break ( 15 min. ) ----- (3) 11:05 - 11:30 Applicationo of III-V nitride films to photovoltaic device Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) (4) 11:30 - 11:55 Estimation of Surface Fermi level differences in surface-modified GaN crystals Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.) (5) 11:55 - 12:20 High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch) Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC) ----- Lunch Break ( 70 min. ) ----- (6) 13:30 - 13:55 Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) (7) 13:55 - 14:20 Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) (8) 14:20 - 14:45 Evaluation of transient current of GaN HEMTs on Si under light Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) (9) 14:45 - 15:10 Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ----- Break ( 15 min. ) ----- (10) 15:25 - 15:50 Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) (11) 15:50 - 16:15 Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) (12) 16:15 - 16:40 Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ---------------------------------------- Fri, Nov 30 AM (09:30 - 17:40) ---------------------------------------- (13) 09:30 - 09:55 Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) (14) 09:55 - 10:20 RF-MBE Growth of InGaN-based quantum nanostructures using DERI Tsutomu Araki, Nao Uematsu, Junichi Sakaguchi, Ke Wang (Ritsumeikan Univ.), Tomohiro Yamaguchi (Kogakuin Univ.), Euijoon Yoon (Seoul National Univ.), Yasushi Nanishi (Ritsumeikan Univ.) (15) 10:20 - 10:45 Nitride semiconductor np-LEDs for improvement of efficiency droop Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.) ----- Break ( 15 min. ) ----- (16) 11:00 - 11:25 Fabrication of red light emitting diode with GaN:Eu,Mg active layer Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech) (17) 11:25 - 11:50 Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) (18) 11:50 - 12:15 Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ----- Lunch Break ( 60 min. ) ----- (19) 13:15 - 13:40 Mg acceptor activation inp-GaN of the structure with n-GaN surface Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) (20) 13:40 - 14:05 Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) (21) 14:05 - 14:30 Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) (22) 14:30 - 14:55 Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) (23) 14:55 - 15:20 The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ----- Break ( 15 min. ) ----- (24) 15:35 - 16:00 Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices Kenichi Kawaguchi, Yoshiaki Nakata, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.), Yasuhiko Arakawa (Univ. of Tokyo) (25) 16:00 - 16:25 Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging Yuji Hino, Nobuhiko Ozaki (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Naoki Ikeda, Yoshimasa Sugimoto (NIMS) (26) 16:25 - 16:50 Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication Yuji Togano, Yuta Kitabayashi, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) (27) 16:50 - 17:15 Development of Ge Light Emitter for Monolithic Light Source Kazuki Tani, Shin-ichi Saito, Katsuya Oda (PETRA), Tadashi Okumura, Toshiyuki Mine (Hitachi), Tatemi Ido (PETRA) (28) 17:15 - 17:40 Design of an optical spectrum control circuit and flattening its transmission spectrum with phase error compensation Tatsuhiko Ikeda (Keio Univ.), Takayuki Mizuno, Hiroshi Takahashi (NTT), Hideaki Asakura, Hiroyuki Tsuda (Keio Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Thu, Dec 13, 2012: Kikai-Shinko-Kaikan Bldg. [Mon, Oct 15] Thu, Jan 24, 2013 - Fri, Jan 25, 2013: Osaka Univ. (Suita) [Wed, Nov 14], Topics: Photonic integrated circuits and devices, swtiching, PLC, fiber devices, waveguide analysis, and others # SECRETARY: Tomoyuki Miyamoto (Tokyo Institute of Technology) TEL +81-45-924-5059, FAX +81-45-924-5977 E-mail: t    t pi    Kazunori Shinoda (Hitachi) TEL +81-42-323-1111，FAX +81-42-327-7786 E-mail:       nv    # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Mon, Dec 17, 2012 - Tue, Dec 18, 2012: Tohoku University [Mon, Oct 22], Topics: Millimeter wave / Terahertz devices and systems Thu, Jan 17, 2013 - Fri, Jan 18, 2013: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 15], Topics: Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. Wed, Feb 27, 2013 - Thu, Feb 28, 2013: Hokkaido Univ. [Fri, Dec 7], Topics: Functional nanodevices and related technologies # SECRETARY: Michihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E-mail :     t Tetsuzo Ueda（Panasonic) TEL：+81-75-956-8273、FAX：+81-75-956-9110 E-mail：    zo pa   c=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Thu, Jan 24, 2013 - Fri, Jan 25, 2013: [Sat, Nov 10] Last modified: 2012-09-21 17:28:44 |
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