ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Tetsu Kachi (Toyota Central R&D Labs.)
Secretary: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)
Assistant: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)

===============================================
Technical Committee on Microwaves (MW)
Chair: Kazuhiko Honjo (Univ. of Electro-Comm.)
Vice Chair: Takashi Ohira (Toyohashi Univ. of Tech.), Futoshi Kuroki (Kure National College of Tech.)
Secretary: Kazuo Kawabata (Fujitsu Labs.), Kenjiro Nishikawa (NTT)
Assistant: Kei Sato (NTT DoCoMo), Koji Shibata (Hachinohe Inst. of Tech.)

DATE:
Thu, Jan 13, 2011 13:30 - 16:55
Fri, Jan 14, 2011 09:30 - 15:20

PLACE:

TOPICS:
Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies

----------------------------------------
Thu, Jan 13 PM (13:30 - 16:55)
----------------------------------------

(1) 13:30 - 13:55
The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission
Masakazu Hori, Kosuke Isono, Hirofumi Noji, Yasuhiro Shibuya (TUS), Shigeo Kawasaki (JAXA)

(2) 13:55 - 14:20
A Study on GaAs-HBT MMIC couplers with feedback circuit techniques
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric)

(3) 14:20 - 14:45
Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate
Takeshi Yuasa, Yukihiro Tahara, Tetsu Owada, Naofumi Yoneda (Mitsubishi Electric Corp.)

----- Break ( 15 min. ) -----

(4) 15:00 - 15:25
Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities
Yuki Nakajima, Suguru Imai, Kenji Taguchi, Tatsuya Kashiwa (Kitami Inst. of Tech.), Toshihide Kitazawa (Ritsumeikan Univ.), Masahiro Suzuki, Kan-ichi Fujii (JAEA)

(5) 15:25 - 15:50
Broadband High Efficiency Class-E GaN HEMT Amplifier
Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric)

----- Break ( 15 min. ) -----

(6) 16:05 - 16:30
A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems
Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT)

(7) 16:30 - 16:55
32-GHz Phase Shifter IC with 810° control range
Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT)

----------------------------------------
Fri, Jan 14 (09:30 - 15:20)
----------------------------------------

(8) 09:30 - 09:55
Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)

(9) 09:55 - 10:20
Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)

----- Break ( 15 min. ) -----

(10) 10:35 - 11:00
Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate
Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)

(11) 11:00 - 11:25
AlGaN/GaN HFETs using highly C-doped layers on Si substrate
Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD)

(12) 11:25 - 11:50
Developing GaN HEMTs for Ka-Band with 20W
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba)

----- Lunch Break ( 70 min. ) -----

(13) 13:00 - 13:25
Process dependence of MOS gate dielectric films on 3C-SiC-OI
Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT)

(14) 13:25 - 13:50
III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech)

(15) 13:50 - 14:15
New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT)

----- Break ( 15 min. ) -----

(16) 14:30 - 14:55
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars
Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric)

(17) 14:55 - 15:20
A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs
Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Wed, Feb 23, 2011 - Thu, Feb 24, 2011: Hokkaido Univ. [Wed, Dec 8], Topics: Functional nanodevices and related technologies
Mon, Mar 7, 2011:
Mon, Apr 18, 2011: Tohoku Univ.． [Mon, Feb 21]

# SECRETARY:
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E-mail :

Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E-mail :

Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E-mail :

Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-mail：

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Thu, Mar 3, 2011 - Fri, Mar 4, 2011: Ibaraki Univ. [Sat, Jan 15], Topics: AP, MW
Fri, Apr 15, 2011: Tohoku University [Thu, Feb 10]

# SECRETARY:
Kei Satoh (NTT DOCOMO,INC.)
TEL:+81-46-840-6230
FAX:+81-46-840-3789
E-mail: