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=============================================== Technical Committee on Electron Device (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT) DATE: Sat, Jul 23, 2016 14:00 - 16:20 Sun, Jul 24, 2016 09:30 - 11:50 PLACE: Tokyo Metropolitan Univ. Minami-Osawa Campus, International House(1-1 Minami-Osawa, Hachioji-shi, Tokyo, Japan 192-0397. http://www.tmu.ac.jp/english/university/campusmap.html. Prof. Michihiko Suhara) TOPICS: Semiconductor Processes and Devices ---------------------------------------- Sat, Jul 23 PM (14:00 - 14:50) ---------------------------------------- (1) 14:00 - 14:25 Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) (2) 14:25 - 14:50 Lorentzian low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices Toshi-kazu Suzuki, Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih (JAIST) ----- Break ( 15 min. ) ----- ---------------------------------------- Sat, Jul 23 PM (15:05 - 16:20) ---------------------------------------- (3) 15:05 - 15:30 Effects of post-deposition anneal on SiO2 layer on Ga2O3 Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) (4) 15:30 - 15:55 p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) (5) 15:55 - 16:20 Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ---------------------------------------- Sun, Jul 24 AM (09:30 - 11:50) ---------------------------------------- (6) 09:30 - 09:55 Resonant interactions in nonlinear metamaterial transmission lines Koichi Narahara (KAIT) (7) 09:55 - 10:20 Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) (8) 10:20 - 10:45 Room temperature negative differential resistance of CaF2/Si/CaF2 resonant tunneling diode Naoyuki Tanabe, Satoshi Shimanaka, Keita Suda, Masahiro Watanabe (Tokyo Tech) ----- Break ( 15 min. ) ----- (9) 11:00 - 11:25 Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas for Circularly Polarized Wave Radiation Daisuke Horikawa, Safumi Suzuki, Masahiro Asada (Tokyo Tech) (10) 11:25 - 11:50 Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa Takemi Tokuoka, Michihiko Suhara (TMU) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Tue, Aug 9, 2016 - Wed, Aug 10, 2016: Kikai-Shinko-Kaikan Bldg. [Fri, Jun 24], Topics: Sensor, MEMS, general Tue, Oct 25, 2016 - Wed, Oct 26, 2016 (tentative): [Fri, Aug 5] # SECRETARY: Koji Matsunaga（NEC) TEL：+81-44-435-8348 FAX：+81-44-455-8253 E-mail： k-      fp   c Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si  jaist Last modified: 2016-07-06 11:16:01 |
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