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Technical Committee on Component Parts and Materials (CPM)
Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.)
Secretary: Koji Enbutsu (NTT), Katsuya Abe (Shinshu Univ.)
Assistant: Junichi Kodate (NTT), Tomomasa Sato (Kanagawa Univ.)
DATE:
Fri, Oct 26, 2012 13:00 - 18:20
Sat, Oct 27, 2012 09:10 - 12:40
PLACE:
TOPICS:
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Fri, Oct 26 PM (13:00 - 18:20)
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(1) 13:00 - 13:25
Deposition characteristics of ZnO thin films using high-energy H2O genarated by a catalytic reaction
Kanji Yasui, Hitoshi Miura, Masami Tahara, Souichi Satomoto (Nagaoka Univ. Technol.)
(2) 13:25 - 13:50
Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction
-- Analysis using a two layer model --
Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.)
(3) 13:50 - 14:15
Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O
Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol)
(4) 14:15 - 14:40
Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method
Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
----- Break ( 10 min. ) -----
(5) 14:50 - 15:15
Cu2ZnSnS4 Thin Film Solar Cells Prepared by Non-Vacuum Processing
-- Improvement of Conversion Efficiency by Investigation of Window Layer Deposition Process --
Kunihiko Tanaka, Takumi Aizawa, Hisao Uchiki (NUT)
(6) 15:15 - 15:40
Fabrication of three-dimensional-structure solar cell with Cu2ZnSnS4
Masato Kurokawa, Kunihiko Tanaka, Minoru Kato, Tomotake Naganuma, Yoshiki Nagahashi, Hisao Uchiki (Nagaoka Univ. of Tec.)
(7) 15:40 - 16:05
Preparation of Cu2ZnSnS4 thin film by sol-gel sulfurization method with Cl free coating solutions
Kota Sakuma, Kunihiko Tanaka, Takumi Aizawa, Yuya Nakano, Hisao Uchiki (NUT)
(8) 16:05 - 16:30
Optimization of sulfurization in CZTS thin film solar cells
Kento Higuchi, Tsukasa Washio, Kazuo Jimbo, Hironori Katagiri (NNCT)
----- Break ( 10 min. ) -----
(9) 16:40 - 17:05
Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates
Hideki Nakazawa, Daiki Suzuki, Tsugutada Narita, Yohei Yamamoto (Hirosaki Univ.)
(10) 17:05 - 17:30
Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy
Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.)
(11) 17:30 - 17:55
Formation of multi-phases of monosilicide and disilicide in Ni/Si system
Atsushi Noya, Mayumi Takeyama, Masaru Sato, Susumu Tokuda (Kitami Inst. Technol.)
(12) 17:55 - 18:20
Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I)
-- Diffusion behavior of Va transition metal --
Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.)
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Sat, Oct 27 AM (09:10 - 12:40)
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(13) 09:10 - 09:35
CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method
Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.)
(14) 09:35 - 10:00
Examination of underlayer for SrAl2O4: Eu, Dy thin films by annealing methods
Kazuaki Kobayashi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Takahiro Kawakami (Niigata Univ.)
(15) 10:00 - 10:25
Mechanical Properties of the OLEDs and ITO Films Prepared on Plastic Substrates
Hiroaki Matsui, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
(16) 10:25 - 10:50
Energy Transfer Process in YVO4:Bi Yellow Phosphor
Taiga Abe, Kouta Taniguchi, Junpei Yagi, Ariyuki Kato (Nagaoka Univ. of Tech.)
----- Break ( 10 min. ) -----
(17) 11:00 - 11:25
Manufacturing and Characterization of Graphene Intercalation Compounds
Hiroshi Yamamoto, Hiroaki Ichikawa, Shogo Satoh, Nobuyuki Iwata (Nihon Univ.)
(18) 11:25 - 11:50
Field Emission Characteristics Considering both the Shield Effect and Series Resistance
Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
(19) 11:50 - 12:15
Estimation of the number of junctions in the Bi-2212 stack by pulse current method
Takahiro Kato, Tsubasa Nishikata, Yukio Kotaki, Hisayuki Suematsu, Kanji Yasui (Nagaoka Univ. Tech), Akira Kawakami (NICT)
(20) 12:15 - 12:40
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.)
# Information for speakers
General Talk will have 18 minutes for presentation and 7 minutes for discussion.
=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:
Mon, Nov 26, 2012 - Wed, Nov 28, 2012: Centennial Hall Kyushu University School of Medicine [Fri, Sep 7], Topics: Design Gaia 2012 -New Field of VLSI Design-
Thu, Nov 29, 2012 - Fri, Nov 30, 2012 (tentative): Osaka City University [Thu, Sep 20], Topics: Ｎｉｔｒide and Compound Semiconductor Devices
Thu, Jan 24, 2013 - Fri, Jan 25, 2013: [Sat, Nov 10]
Last modified: 2012-08-24 14:51:31
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