Thu, May 28 PM 13:00 - 18:20 |
(1) |
13:00-13:25 |
Synthesis of graphenes by chemical vapor deposition using liquid precursor |
Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech) |
(2) |
13:25-13:50 |
Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading |
Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.) |
(3) |
13:50-14:15 |
Study on self-assembled monolayers by the immersion method on SiC substrate |
Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech) |
(4) |
14:15-14:40 |
Optical properties of InGaN nanoplates grown by molecular beam epitaxy |
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) |
|
14:40-14:50 |
Break ( 10 min. ) |
(5) |
14:50-15:15 |
Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer |
Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
(6) |
15:15-15:40 |
Control of N composition of GaAsN alloy grown by surface nitridation |
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) |
(7) |
15:40-16:05 |
Growth and preliminary MOSFETs of corundum-structured oxide semiconductors |
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) |
(8) |
16:05-16:30 |
Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method |
Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) |
|
16:30-16:40 |
Break ( 10 min. ) |
(9) |
16:40-17:05 |
Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes |
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) |
(10) |
17:05-17:30 |
Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator |
Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) |
(11) |
17:30-17:55 |
Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation |
Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) |
(12) |
17:55-18:20 |
Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates |
Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) |
Fri, May 29 AM 08:40 - 12:35 |
(13) |
08:40-09:05 |
Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels |
Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT) |
(14) |
09:05-09:30 |
Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation |
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) |
(15) |
09:30-09:55 |
Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ |
Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech) |
(16) |
09:55-10:20 |
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC |
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) |
|
10:20-10:30 |
Break ( 10 min. ) |
(17) |
10:30-10:55 |
Effects of annealing on properties of electrochemically deposited CuxZnyS thin films |
Tong Bayingaerdi, Masaya Ichimura (NITech) |
(18) |
10:55-11:20 |
Influence of stirring on SnS deposition using chemical bath deposition |
Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) |
(19) |
11:20-11:45 |
Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition |
Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT) |
(20) |
11:45-12:10 |
Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO |
Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.) |
(21) |
12:10-12:35 |
Observation of fluorescence from Legionella pneumophila capturedin a microfluidic chip |
Yusuke Nishimura, Ryuhei Hayashi, Hirokazu Nakazawa, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii (Toyohashi Univ. of Tech.), Katsuyuki Machida (Tokyo Institute of Tech., NTT-AT), Kazuya Masu (Tokyo Institute of Technology, NTT Advanced Tech.), Changle Wang, Ken-Ichiro Iida, Mitsumasa Saito, Shin-ichi Yoshida (Kyusyu Univ.) |