IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2023-01-30 / Issue Date : 2023-01-23

SDM2022-79
[Invited Talk] Integration Design of 3D Heterogeneous IGZO/Ge/2Si 6T SRAM for Extremely Reduced Cell Size
Chang Wenhsin, , , , , , (****)
pp. 1 - 4

SDM2022-80
[Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL)
pp. 5 - 8

SDM2022-81
[Invited Talk] 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance >107 for eFlash-type MRAM
H Honjoi, K Nishioka, S Miura, Hiroshi Naganuma, T Watanabe, T Nasuno, T Tanigawa, Y Noguchi, H Inoue, M Yasuhiro, S Ikeda, T Endoh (Tohoku Univ.)
pp. 9 - 12

SDM2022-82
[Invited Talk] Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off
Shunsuke Asaba, Masaru Furukawa, Yuji Kusumoto (Toshiba D&S), Ryosuke Iijima (Toshiba), Hiroshi Kono (Toshiba D&S)
pp. 13 - 16

SDM2022-83
[Invited Talk] Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2
Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo)
pp. 17 - 20

SDM2022-84
[Invited Talk] Resonant Tunneling Diode Technology for Future Terahertz Applications
Safumi Suzuki (Tokyo Insutitute of Tech.)
pp. 21 - 24

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan