IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 119, Number 397

Silicon Device and Materials

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Table of contents

SDM2019-82
[Invited Talk] Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Masaki Noguchi, Tatsunori Isogai, Hiroyuki Yamashita, Keiichi Sawa, Ryota Fujitsuka, Takanori Yamanaka, Shunsuke Okada, Tomonori Aoyama, Fumiki Aiso, Junko Abe, Yoshiro Ogawa, Seiji Nakagawa, Hideshi Miyajima (KIOXIA)
pp. 1 - 4

SDM2019-83
[Invited Talk] Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
Keiichi Maekawa (renesas)
pp. 5 - 8

SDM2019-84
[Invited Talk] Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia)
p. 9

SDM2019-85
[Invited Talk] Can in-memory/Analog Accelerators be a Silver Bullet for Energy-efficient Inference?
Jun Deguchi, Daisuke Miyashita, Asuka Maki, Shinichi Sasaki, Kengo Nakata, Fumihiko Tachibana, Ryuichi Fujimoto (KIOXIA)
p. 11

SDM2019-86
[Invited Talk] 3D Semicircular Flash Memory Cell: Novel Split-Gate Technology to Boost Bit Density
Tetsu Morooka (kioxia)
pp. 13 - 18

SDM2019-87
[Invited Talk] Future of Non-Volatile Memory - From Storage to Computing
Kazunari Ishimaru (kioxia)
p. 19

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.