Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2016] | [2017] | [2018] | [2019] | [2020] | [2021] | [2022] | [Japanese] / [English]
ED2019-10
Study of influence of phonon drag effect on thermoelectromotive force of Si wire thermopile
Yuhei Suzuki, Khotimatul Fauziah (Shizuoka Univ.), Yoshinari Kamakura (Osaka Inst. Tech.), Takanobu Watanabe (Waseda Univ.), Faiz Salleh (Univ. of Malaya), Hiroya Ikeda (Shizuoka Univ.)
pp. 1 - 4
ED2019-11
Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si
Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)
pp. 5 - 8
ED2019-12
Study of new stacked full adder circuit with fabrication technology of 3D flash memory.
Fumiya Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech.)
pp. 9 - 13
ED2019-13
VLS Growth of SnO2 Nanowires by Atmospheric-pressure CVD and Their Gassensing Properties
Tomoaki Terasako, Toshiki Kurashige, Hideyuki Marui, Goh Manabe (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Masami Mori, Yoshihiko Sadaoka (Ehime Univ.)
pp. 15 - 20
ED2019-14
Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate
Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.)
pp. 21 - 24
ED2019-15
[Invited Talk]
Electron Nano-Aspirator using Electron-Electron Scattering in Si
Yukinori Ono (Shisuoka Univ.)
pp. 25 - 28
ED2019-16
Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.)
pp. 29 - 34
ED2019-17
Investigation of Spin Connection Parameters on Ising Spin Computing
Tsukasa Miki, Mitsuki Ito, Yuki Kushitani, Yosuke Hirata, Moe Shimada, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 35 - 38
ED2019-18
Investigation of Spin Decision Logics on 2D Ising Spin Computing
Moe Shimada, Mitsuki Ito, Yuki Kushitani, Yousuke Hirata, Tsukasa Miki, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 39 - 42
ED2019-19
Formation of Au Atomic Junctions Using Genetic Algorithm
Keita Takebayashi, Takuya Sakurai, Yosuke Hirata, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 43 - 46
ED2019-20
Nitriding by active screen plasma and its surface structure analysis
Susumu Ichimura, Seigo Takashima (Nagoya Industries Promotion Corporation), Ippei Tsuru, Daichi Ohkubo, Hideaki Matsuo, Mineo Goto (Nakanihon-Ro Kogyo Co., Ltd.)
pp. 47 - 52
ED2019-21
Study of MgZnO thin film for soler power generation by sol-gel method
Sho Inoue, Yasushi Takano (Shizuoka Univ.)
pp. 53 - 56
ED2019-22
Chemical Bath Deposition of ZnO Nanorods and UV Light Detection by PEDOT:PSS/ZnO Nanorods Heterojunctions
Tomoaki Terasako, Shohei Obara (Grad. School Sci. & Eng., Ehime Univ.), Suguru Namba, Naoto Hashikuni (Fac. Eng., Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Res. Inst., Kochi Univ. Technol.)
pp. 57 - 62
ED2019-23
Characterization of flexible thermoelectric materials for wearable power generators
Hiroya Ikeda, Faizan Khan, Misa Ohkubo, Arockiyasamy Periyanayaga Kristy (Shizuoka Univ.), Toshitaka Yamakawa (Kumamoto Univ.), Kazushi Ikeda (NAIST), Masaru Shimomura, Kenji Murakami, Yasuhiro Hayakawa (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Yuhei Suzuki (Shizuoka Univ.)
pp. 63 - 66
ED2019-24
Experimental Study on Optimization of 2D Random Nanostructure Formation and Electrical Readout for Nano Artifact Metrics
Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Seiya Kasai (Hokkaido Univ.)
pp. 67 - 70
ED2019-25
Direct growth of Graphene using microwave surface wave plasma CVD and its analysis
Susumu Ichimura (Nagoya Industries Promotion Corporation), Riteshkumar Ratneshkumar Vishwakarma1, Zhu Rucheng, Masayoshi Umeno (C`s Techno Inc.)
pp. 71 - 76
ED2019-26
Study of Fabrication Process for Nitride-based Semiconductor Integrated Circuits
-- Threshold voltage control by Si-ion implantation --
Hiroshi Okada, Taichi Yokoyama, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech.)
pp. 77 - 80
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.