IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 116, Number 450

Silicon Device and Materials

Workshop Date : 2017-02-06 / Issue Date : 2017-01-30

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Table of contents

SDM2016-139
[Invited Talk] Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure
Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba)
pp. 1 - 4

SDM2016-140
[Invited Talk] Fabrication of High-Quality Metalic Films for ULSI by ALD
Yukihiro Shimogaki (UTokyo)
pp. 5 - 10

SDM2016-141
[Invited Talk] NiGe/Ge contact formation by microwave annealing method for low-thermal budget processing
Osamu Nakatsuka (Grad. Sch. of Eng., Nagoya University), Yoshimasa Watanabe (TEL), Akihiro Suzuki (Grad. Sch. of Eng., Nagoya University), Yoshio Nishi (Dept. of Electrical Engineering, Stanford University), Shigeaki Zaima (IMaSS, Nagoya University)
pp. 11 - 15

SDM2016-142
[Invited Talk] Huge-potential need to the memory-system for ultra-long term preservation and its issues -- Development of the WASHI in digital era --
Toshio Kobayashi (SIT)
pp. 17 - 22

SDM2016-143
[Invited Talk] Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST)
pp. 23 - 28

SDM2016-144
[Invited Talk] Large Scale Crossbar Switch Block (CSB) with Via-Switch for a Low-Power FPGA
Naoki Banno, Munehiro Tada, Koichiro Okamoto, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada (NEC Corp.), Hiroyuki Ochi (Ritsumeikan Univ.), Hidetoshi Onodera (Kyoto Univ.), Masanori Hashimoto (Osaka Univ.), Tadahiko Sugibayashi (NEC Corp.)
pp. 29 - 34

SDM2016-145
[Invited Talk] Development of a Wet Cleaning Process for High-Yield Formation of via-last TSVs
Naoya Watanabe (AIST), Hidekazu Kikuchi, Azusa Yanagisawa (LAPIS), Haruo Shimamoto, Katsuya Kikuchi, Masahiro Aoyagi (AIST), Akio Nakamura (LAPIS)
pp. 35 - 40

SDM2016-146
[Invited Talk] Direct Cu metallization on TGV Glass substrate using Wet Process.
Kotoku Inoue, Masatoshi Takayama, Tsubasa Fujimura, Shigeo Onitake (Koto)
pp. 41 - 44

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan