Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2013] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [Japanese] / [English]
MW2016-172
[Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.)
pp. 1 - 5
MW2016-173
[Invited Lecture]
Commercialization of GaN-HEMT for High Frequency Application
Yasunori Tateno (Sumitomo Electric)
pp. 7 - 12
MW2016-174
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.)
pp. 13 - 16
MW2016-175
[Invited Lecture]
Towards Realization of GaN Vertical Power Devices
Jun Suda (Kyoto Univ.)
pp. 17 - 18
MW2016-176
[Invited Lecture]
Current status and problems of epitaxial wafers for GaN electronic devices
Yohei Otoki (SCIOCS)
pp. 19 - 22
MW2016-177
[Invited Lecture]
Characterization of Metal/GaN Schottky Contacts
-- Review from the Early Days --
Kenji Shiojima (Univ. of Fukui)
pp. 23 - 28
MW2016-178
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.)
pp. 29 - 33
MW2016-179
Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks
Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech)
pp. 35 - 40
MW2016-180
Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator
Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.)
pp. 41 - 46
MW2016-181
Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators
Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.)
pp. 47 - 52
MW2016-182
An X-band Low Loss/High Power SPST Switch Using GaN on Si
Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric)
pp. 53 - 56
MW2016-183
Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.)
pp. 57 - 62
MW2016-184
Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.)
pp. 63 - 68
MW2016-185
A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter
Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.)
pp. 69 - 73
MW2016-186
C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric)
pp. 75 - 79
MW2016-187
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric)
pp. 81 - 84
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.