IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 116, Number 296

Silicon Device and Materials

Workshop Date : 2016-11-10 - 2016-11-11 / Issue Date : 2016-11-03

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Table of contents

SDM2016-79
[Invited Talk] SISPAD 2016 Review (1)
Kenichiro Sonoda (Renesas Electronics)
pp. 1 - 7

SDM2016-80
[Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi)
pp. 9 - 14

SDM2016-81
[Invited Talk] Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era
Yasuhisa Omura (Kansai Univ.)
pp. 15 - 22

SDM2016-82
[Invited Talk] Free carrier density dependent band gap and phonon frequency in germanium
Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo)
pp. 23 - 26

SDM2016-83
[Invited Talk] Simulation for Impact of ISFET Structure on Sensitivity
Kazuya Matsuzawa (Toshiba)
pp. 27 - 32

SDM2016-84
[Invited Talk] Review of SISPAD 2016 (2)
Yoshinari Kamakura (Osaka Univ.)
pp. 33 - 36

SDM2016-85
[Invited Talk] Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices
Kazuhiro Mochizuki (AIST)
pp. 37 - 42

SDM2016-86
[Invited Talk] Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method -- Toward Advanced Atomistic Trap Physics --
Toshiaki Tsuchiya (Shimane Univ.)
pp. 43 - 47

SDM2016-87
[Invited Talk] Application of DFT Calculation for the Development of High Quality Si and Ge Substrates -- From Ultra Large Diameter Crystal Pulling to Metal Gettering --
Koji Sueoka (Okayama Pref. Univ.)
pp. 49 - 54

SDM2016-88
Self-Consistent Monte Carlo Device Simulations Under Double-Gate Device Structures
Hajime Sakamoto, Yasuaki Rokugo, Nobuyuki Sano (Tsukuba univ.)
pp. 55 - 58

SDM2016-89
Self-Consistent Device Simulation of a-Si p-i-n Solar Cells and Physical Mechanism of Capture and Emission Processes
Azuma Suzuki (Tsukuba Univ.), Katsuhisa Yoshida (Tokyo Univ.), Nobuyuki Sano (Tsukuba Univ.)
pp. 59 - 64

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan