Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2016-27
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.)
pp. 1 - 4
ED2016-28
Lorentzian low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices
Toshi-kazu Suzuki, Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih (JAIST)
pp. 5 - 9
ED2016-29
Effects of post-deposition anneal on SiO2 layer on Ga2O3
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)
pp. 11 - 15
ED2016-30
p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage
Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.)
pp. 17 - 20
ED2016-31
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama)
pp. 21 - 24
ED2016-32
Resonant interactions in nonlinear metamaterial transmission lines
Koichi Narahara (KAIT)
pp. 25 - 30
ED2016-33
Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current
Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.)
pp. 31 - 34
ED2016-34
Room temperature negative differential resistance of CaF2/Si/CaF2 resonant tunneling diode
Naoyuki Tanabe, Satoshi Shimanaka, Keita Suda, Masahiro Watanabe (Tokyo Tech)
pp. 35 - 39
ED2016-35
Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas for Circularly Polarized Wave Radiation
Daisuke Horikawa, Safumi Suzuki, Masahiro Asada (Tokyo Tech)
pp. 41 - 44
ED2016-36
Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa
Takemi Tokuoka, Michihiko Suhara (TMU)
pp. 45 - 50
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.