Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2013] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [Japanese] / [English]
SDM2016-32
[Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba)
pp. 1 - 4
SDM2016-33
[Invited Lecture]
Preparation of orientation-controlled HfO2 –based films and their properties
Hiroshi Funakub, Takao Shimizu, Kiriha Katayama, Takanori Mimura (Tokyo Tech.)
pp. 5 - 8
SDM2016-34
[Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators
Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo)
pp. 9 - 13
SDM2016-35
Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories --
Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo)
pp. 15 - 19
SDM2016-36
Proposal of vertical stacked type Fe-FET NAND logic and its application to system LSI
Shigeyoshi Watanabe (Shonan Inst. Tech.), Tomohiro Yokota (Data Techno)
pp. 21 - 26
SDM2016-37
Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.)
pp. 27 - 32
SDM2016-38
A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.)
pp. 33 - 36
SDM2016-39
Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate
Yuichi Kaneda, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 37 - 41
SDM2016-40
XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface
Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 43 - 47
SDM2016-41
Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD
NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.)
pp. 49 - 52
SDM2016-42
Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces
Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.)
pp. 53 - 58
SDM2016-43
[Invited Lecture]
Application of layered chalcogenide materials to field effect transistor devices
Keiji Ueno (Saitama Univ.)
pp. 59 - 64
SDM2016-44
[Invited Lecture]
Structural-controlled synthesis of atomically thin layered materials and its plasma functionalization
Toshiaki Kato, Toshiro Kaneko (Tohoku Univ.)
pp. 65 - 68
SDM2016-45
[Invited Lecture]
Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET
Takamasa Kawanago, Shunri Oda (Tokyo Tech.)
pp. 69 - 74
SDM2016-46
MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)
pp. 75 - 78
SDM2016-47
[Invited Lecture]
Growth and characterization of atomically-thin transition metal dichalcogenides
Yasumitsu Miyata (Tokyo Metropolitan Univ.)
pp. 79 - 84
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.