Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2013] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [Japanese] / [English]
SDM2016-1
Effect of surface modification on immobilization and direct electron transfer reaction of cytochrome c on solid/liquid interfaces
Naoki Matsuda, Hirotaka Okabe (AIST)
pp. 1 - 5
SDM2016-2
[Invited Talk]
Effect of MoO3 Cathode Buffer on the Performance of Organic Solar Cells
Hiroshi Kageyama, Shotaro Hayashi, Daichi Hasebe, Iwamichi Ishikawa, Yusuke Nakamoto (Univ. of the Ryukyus), Taichiro Morimune (Natl. Inst. Technol., Kagewa College)
pp. 7 - 10
SDM2016-3
[Invited Talk]
OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech)
pp. 11 - 15
SDM2016-4
[Invited Talk]
Blockade and Staircase Phenomena of Holes in Mesoscopic Scale λ-Deoxyribonucleic Acid (DNA)/SiO2/Si Structure
Naoto Matsuo, Tadao Takada, Akira Heya, Kazushuge Yamana (Univ Hyogo), Tadashi Sato, Shin Yokoyama (Hirosima Univ), Yasuhisa Omura (Kansai Univ)
pp. 17 - 22
SDM2016-5
[Invited Talk]
Growth and characterization of Sn-containing group-IV semiconductor thin film
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 23 - 26
SDM2016-6
Formation of GeSn Thin-Film-Crystals with high Sn concentration (>10%) on insulator
Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.)
pp. 27 - 28
SDM2016-7
Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization
Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 29 - 30
SDM2016-8
Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto)
pp. 31 - 34
SDM2016-9
Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors.
Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.)
pp. 35 - 38
SDM2016-10
Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure
Taisei Harada, Futa Gakiya, Takuya Ashitomi, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Kanji Noda, Akira Suwa (GiGAPHOTON Inc.), Hiroshi Ikenoue (Kyusyu Univ.), Tetsuo Okuyama (TOYOBO Company, Limited)
pp. 39 - 41
SDM2016-11
High Photoconductive Silicon Thin-film formed by Blue Laser Diode Annealing for System on Panel
Koswaththage Charith Jayanada, Kota Nakao, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus)
pp. 43 - 47
SDM2016-12
[Invited Talk]
Nonvolatile Memory Applications Using Oxide Thin-Film Transistors
Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.)
pp. 49 - 52
SDM2016-13
[Invited Talk]
Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications
Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.)
pp. 53 - 56
SDM2016-14
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region --
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT)
pp. 57 - 60
SDM2016-15
Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack
Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.)
pp. 61 - 65
SDM2016-16
Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs
Hikaru Tamashiro, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. Ryukyu)
pp. 67 - 69
SDM2016-17
An Application of Green Laser Annealing in Low-Voltage Power MOSFETs
Yi Chen, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus)
pp. 71 - 75
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.