IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 115, Number 417

Silicon Device and Materials

Workshop Date : 2016-01-22 / Issue Date : 2016-01-15

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Table of contents

SDM2015-108
[Invited Talk] Reliability Results of 4 million Micro Bump Interconnections of 3D Stacked 16 M Pixel Image Sensor
Yoshiaki Takemoto, Naohiro Takazawa, Mitsuhiro Tsukimura, Haruhisa Saito, Toru Kondo, Hideki Kato, Jun Aoki, Kenji Kobayashi, Shunsuke Suzuki, Yuichi Gomi, Seisuke Matsuda, Yoshitaka Tadaki (Olympus)
pp. 1 - 4

SDM2015-109
[Invited Talk] Re-think Stress migration phenomenon with Stress measurement in 12years
Hideya Matsuyama (Socionext), Takashi Suzuki, Tomoji Nakamura (FJ Lab), Motoki Shiozu, Hideo Ehara (MIFS)
pp. 5 - 8

SDM2015-110
Copper Thin Film Growth using Cu(I) Amidinate Precursor in Supercritical Carbon Dioxide
Md Rasadujjaman, Mitsuhiro Watanabe (Univ. Yamanashi), Hiroshi Sudoh, Hideaki Machida (Gas phase growth), Eiichi Kondoh (Univ. Yamanashi)
pp. 9 - 12

SDM2015-111
In-situ ellipsometry of Cu surfaces immersed in BTA-H2O2 solutions
Tatsuya Kawakami, Eiichi Kondoh, Mitsuhiro Watanabe (University of Yamanashi), Satomi Hamada, Shohei Shima, Hirokuni Hiyama (Ebara Corporation)
pp. 13 - 15

SDM2015-112
[Invited Talk] characterization of nitride thin film deposited at low temperatures
Mayumi B. Takeyama, Masaru Sato (Kitami inst.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami inst.)
pp. 17 - 20

SDM2015-113
Characteristic of TiNx film by low temperature deposition using radical treatment
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.)
pp. 21 - 24

SDM2015-114
Fabrication of highly reliable Co(W) thin film by physical vapor deposition for next generation ULSI Cu interconnects
Taewoong Kim, Kouta Tomita, Takeshi Momose (Univ. of Tokyo), Takaaki Tsunoda, Takayuki Moriwaki (CANON ANELVA), Yukihiro Shimogaki (Univ. of Tokyo)
pp. 25 - 28

SDM2015-115
Fabrication of Multilayer Graphene by Solid-Phase Precipitation with Current Stress
MD Sahab Uddin, Hiroyasu Ichikawa, Shota Sano (SIT), Kazuyoshi Ueno (SIT/RCGI)
pp. 29 - 32

SDM2015-116
[Invited Talk] Effect of Wafer Thinning on DRAM Characteristics for Bumpless Interconnects and WOW Applications
Y. S. Kim, S. Kodama, Y. Mizushima, T. Nakamura, N. Maeda, K. Fujimoto (Tokodai), A. Kawai (DISCO), T. Ohba (Tokodai)
pp. 33 - 37

SDM2015-117
[Invited Talk] Novel reconfigured wafer-to-wafer(W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration
Kangwook Lee, Taksfumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.)
pp. 39 - 43

SDM2015-118
[Invited Talk] Packaging Material for 2.5D/3D TSV Integration
Kazuyuki Mitsukura, Tatsuya Makino, Keiichi Hatakeyama (Hitachi Chemical), Kenneth June Rebibis, Andy Miller, Eric Beyne (IMEC)
pp. 45 - 47

SDM2015-119
[Invited Talk] TSV Process Technology by Printing -- Application of Nano-Function Materials --
Hiroaki Ikeda, Shigenobu Sekine, Ryuji Kimura, koichi Shimokawa, keiji Okada, Hiroaki Shindo, Tatsuya Ooi, Rei Tamaki (Napra), Makoto Nagata (Kobe-Univ.)
pp. 49 - 54

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan