Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2009-128
GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer
Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima)
pp. 1 - 4
ED2009-129
HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates
Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.)
pp. 5 - 8
ED2009-130
MOVPE growth and optical properties of AlGaN on AlN/sapphire
Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.)
pp. 9 - 12
ED2009-131
MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique
Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST)
pp. 13 - 18
ED2009-132
High quality InN crystal growh by RF-MBE
-- Growth of position-controlled InN nanocolumns --
Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.)
pp. 19 - 24
ED2009-133
Proposal of new growth method for high-quality InN and development on growth of InGaN
Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.)
pp. 25 - 29
ED2009-134
Exciton emission mechanism in AlN epitaxial films
Takeyoshi Onuma, Kouji Hazu (Tohoku Univ.), Takayuki Sota (Waseda Univ.), Akira Uedono (Univ. of Tsukuba), Shigefusa F. Chichibu (Tohoku Univ.)
pp. 31 - 34
ED2009-135
High spatial resolution PL mapping of {11-22} InGaN quantum wells by scanning near-field optical microscope
Akio Kaneta, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 35 - 38
ED2009-136
Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 39 - 42
ED2009-137
Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates
Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST)
pp. 43 - 46
ED2009-138
Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations
Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST)
pp. 47 - 50
ED2009-139
Electrical and optical properties of polycrystalline GaInAs thin films
Yoshichika Torii, Takuya Okuzako, Shin-ya Takami, Yasutomo Kajikawa (Shimane Univ.)
pp. 51 - 56
ED2009-140
Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN
Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ)
pp. 57 - 60
ED2009-141
Ultraviolet AlGaN based multiple-quantum-well laser diodes
Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics)
pp. 61 - 64
ED2009-142
Reduction in operating voltage of UV laser diode
Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.)
pp. 65 - 69
ED2009-143
Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures
Tohru Honda, Tadashi Nozaki, Naoyuki Sakai, Kazuyuki Noguchi (Kogakuin Univ.)
pp. 71 - 74
ED2009-144
High Efficiency ultraviolet emitters by activation annealing in oxygen flow
Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
pp. 75 - 80
ED2009-145
Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices
-- Development from emitters into solar cells --
Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
pp. 81 - 84
ED2009-146
GaN Photodetector with Nanostructure on Surface
Jing Zhang, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Atsuyuki Fukano, Satoru Tanaka (SCIVAX)
pp. 85 - 89
ED2009-147
AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE
Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken)
pp. 91 - 94
ED2009-148
High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K)
Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso)
pp. 95 - 98
ED2009-149
Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates
Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)
pp. 99 - 103
ED2009-150
Variation of surface properties in Mg-doped GaN
Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST)
pp. 105 - 108
ED2009-151
Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima)
pp. 109 - 114
ED2009-152
Surface properties and deep electronic levels of AlGaN with high Al compositions
Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.)
pp. 115 - 118
ED2009-153
Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.)
pp. 119 - 123
ED2009-154
Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure
Fuminao Watanabe (Fukui Univ.), Norimasa Yafune (JRCM/Sharp Corp.), Motoi Nagamori, Hironari Chikaoka (Fukui Univ.), Keiichi Sakuno (Sharp Corp.), Masaaki Kuzuhara (Fukui Univ.)
pp. 125 - 128
ED2009-155
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates
Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 129 - 132
ED2009-156
Large Current operation of GaN MOSFETs
Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association)
pp. 133 - 137
ED2009-157
50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate
Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)
pp. 139 - 144
ED2009-158
Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution
Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.)
pp. 145 - 150
ED2009-159
Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band
Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT)
pp. 151 - 155
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.