Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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LQE2008-96
Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy
Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
pp. 1 - 6
LQE2008-97
Random lasing in GaN nanocolumns
Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.)
pp. 7 - 12
LQE2008-98
A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy
Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo)
pp. 13 - 16
LQE2008-99
Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates
Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center)
pp. 17 - 20
LQE2008-100
Improvement of AlN-template quality for deep-UV and UV light emitters
Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin)
pp. 21 - 24
LQE2008-101
Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE
Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 25 - 28
LQE2008-102
Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique
Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.)
pp. 29 - 32
LQE2008-103
Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region
Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.)
pp. 33 - 36
LQE2008-104
A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity
Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic)
pp. 37 - 40
LQE2008-105
High-Power GaN-based Blue-Violet Laser Diodes
Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO)
pp. 41 - 44
LQE2008-106
Achieving P-type InN and Its Characterization
-- Present Status and Future Prospects --
Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.)
pp. 45 - 50
LQE2008-107
Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light
Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
pp. 51 - 56
LQE2008-108
Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells
Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.)
pp. 57 - 60
LQE2008-109
Control of substrate curvature during MOVPE growth of AlGaN
Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 61 - 64
LQE2008-110
Low-pressure HVPE growth and characterization of AlN on period-trench-pattered substrate
Yusuke Katagiri, Kazuteru Okuura, Jiejun Wu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tetsuya Ezaki, Noriyuki Kuwano (Kyushu Univ.)
pp. 65 - 70
LQE2008-111
Toward high-power operation of 230nm-band AlGaN UV-LED
Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST)
pp. 71 - 76
LQE2008-112
270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST)
pp. 77 - 82
LQE2008-113
280nm-band InAlGaN-based high-power deep-UV LEDs
Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.)
pp. 83 - 88
LQE2008-114
Analysis of AlGaN Growth on MOVPE by Computational Simulation
Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.)
pp. 89 - 92
LQE2008-115
Luminescence properties from two types of prismatic planes of InGaN
Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science)
pp. 93 - 96
LQE2008-116
Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates
Atsushi Yamaguchi (Kanazawa Inst. of Technology)
pp. 97 - 102
LQE2008-117
Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.)
pp. 103 - 108
LQE2008-118
Optimum Design of AlGaN/GaN HEMTs with Field Plate
Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
pp. 109 - 114
LQE2008-119
Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface --
Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 115 - 120
LQE2008-120
Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD
Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 121 - 124
LQE2008-121
Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer
Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC)
pp. 125 - 130
LQE2008-122
An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.)
pp. 131 - 136
LQE2008-123
Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers
Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 137 - 140
LQE2008-124
Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT)
pp. 141 - 144
LQE2008-125
Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique
Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic)
pp. 145 - 148
LQE2008-126
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure
Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.)
pp. 149 - 154
LQE2008-127
Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors
Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ)
pp. 155 - 159
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.