SDM06program

★シリコン材料・デバイス研究会 (SDM)
専門委員長　松波弘之　副委員長　柴田　直
幹事　板倉徹・木本恒暢　幹事補佐　堀川貢弘

５月２０日からの専門委員長、幹事、幹事補佐
専門委員長　最上徹　副委員長　徳光永輔
幹事　木本恒暢・堀川貢弘　

★電子デバイス研究会 (ED)
専門委員長　上田大助　副委員長　水谷孝
幹事　葛原正明・田上知紀
幹事補佐　山幡章司・筒井一生

５月２０日からの専門委員長、副委員長、幹事、幹事補佐
専門委員長　上田大助　副委員長　水谷孝
幹事　田上知紀・山幡章司　　幹事補佐　筒井一生・亀山敦

日時：６月２８日（水）8:45～18:25
　　　６月２９日（木）8:30～21:00
　　　６月３０日（金）8:30～15:40
　　　（若干の時間変更の可能性あり）
会場：プラザでいご（沖縄保養会館）
住所：沖縄県那覇市楚辺1-14-12
電話：TEL　098-855-5741

アクセス：那覇空港からタクシーで15分。
国際通りの裏道で、ＮＴＴ沖縄支店の隣に位置しております。
近くで目印となる建物は、沖縄県庁、那覇高校、裁判所、中央公園、
城岳小学校があります。

議題：先端半導体デバイスの基礎と応用
2000 Asia-Pacific Workshop on Fundamental and Application of
Advanced Semiconductor Devices

28日午前

1. A New Self-Aligned Asymmetric Structure (SAAS) for 0.1um MOSFET Technology
○Chang-Soon Choi・Kyung-Whan Kim・Woo-Young Choi(Yonsei University)

2. Excimer Laser Annealing for 0.1um MOSFET
○Takashi Noguchi・Michitaka Kubota・Hiroshi Yamamoto・
Kouichi Matsumoto・Machio Yamagishi(Sony)

3. Analysis of a Novel Self-Aligned Elevated Source Drain MOSFET
with Reduced Gate-Induced Drain Leakage Current
○Kyung-Whan Kim・Chang-Soon Choi・Woo-Young Choi(Yonsei University)

4. [Invited] New Process Technologies for Copper/ Low-k Metallization
   -- Abrasive-Free Copper CMP and New Low-k Material:
   Methyl-silicon-oxycarbide --
   ○Kenji Hinode・Sei-ichi Kondo・Takeshi Furusawa・Noriyuki Sakuma・
   Daisuke Ryuzaki・Ken-ichi Takeka・Shun-taro Machida・Yasushi Goto・
   Hizuru Yamaguchi・Yoshio Homma(Hitachi)

5. Sub 4-nm Polyoxide Using ECR(Electron Cyclotron Resonance)
N_2O Plasma Oxidation
○Sangyeon Han・Hyungcheol Shin(KAIST)

6. Low Temperature Formation of Ultra-thin SiO_2 films Using Oxygen
   Radicals and the Application for MOSFET Gate Insulator
   ○Masahiko Kanehiro・Yasuyuki Ueda・Tsunenobu Kimoto・
   Hiroyuki Matsunami(Kyoto Univ.)

7. Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
○Tae-Kyun Kim・Se-Aug Jang・In-Seok Yeo・Jae-Sung Roh・
Jeong-Mo Hwang(Hyundai Electronics)

28日午後

8. [Invited] Prospects and Key Issues for III-V Compoud Semiconductor
Quantum Devices
○Hideki Hasegawa(Hokkaido Univ.)

9. [Invited] Lithography for 100nm and below at ASET
○Shinji Okazaki (ASET)

10. [Invited] A Novel Integration Technology for Gigabit DRAM with
    0.115um Design Rule
    ○Sangdon Lee・Hyunpil Noh・Woncheol Cho・Jongrim Lee・
    Gucheol Jeong・Sung-keun Chang・Hyunjo Yang・Dongseok Kim・
    Junki Kim・Jisoo Park・Junsik Lee・Jinwon Park・Hee-Koo Yoon
    (Hyundai Electronics)

11. [Invited] CPU Technologies beyond GHz
Soocheol Lee・Youngwug Kim・Sungbae Park・○Kwangpyuk Suh
(Samsung Electronics)

12. Demonstration of a Novel Multiple-valued T-gate using
    Multiple-Junction Surface Tunnel Transistors and Its Application
    to Three-valued Data Flip-Flop
    ○Tetsuya Uemura・Toshio Baba(NEC)

13. Room Temperature Negative Differential Resistance of CdF_2-CaF_2
    Resonant Tunneling Diode on Si(111)
    ○Masahiro Watanabe・Toshiyuki Funayama・Taishi Teraji・
    Naoto Sakamaki(Tokyo Institute of Technology)

14. Memory Operation of AlGaAs/GaAs Heterostructure FET with InAs
    Quantum Dots
    J.Nolde・T. Inayoshi・S. Kishimoto・○Takashi Mizutani
    (Nagoya Univ.)

15. Implementation of the Single Electron Circuit Simulation by SPICE:
    KOSEC-SPICE
    YunSeop Yu(Korea Univ.)・Jung Hyun Oh(Univ. of Seoul)・
    ○SungWoo Hwang(Korea Univ.)・Doyeol Ahn(Univ. of Seoul)

16. Calculation of Electrical Transport Properties for Novel
    Single Gated Single Electron Transistors
    ○Bong Hoon-Lee・Moon-Young Jeong・Yoon-Ha Jeong
    (Pohang Univ. of Science and Technology)

17. Application of Single Wall Carbon Nanotube to Nano Electron Devices
○Kazuhiko Matsumoto・Yoshitaka Gotoh・Seizo Kinosita・
Masami Ishii(Electrotechnical Laboratory)
29日午前

1. [Invited] High-Frequency AlGaN/GaN Heterostructure FETs
○Kaoru Inoue・Y. Ikeda・H. Masato・T. Matsuno・K. Nishii
(Matsushita Electronics)

2. Extraction of GaAs/InGaP HBT Small-Signal Equivalent Circuit
   Based on a Genetic Algorithm
   D.S. Chang・M.K. Rhee・J.S. Moon・○K.S. Yoon(Korea Univ.)・
   C.S. Park(Information and Communications Univ.)

3. The New Cold HEMT Equivalent Circuit for Extracting Extrinsic
Resistance
D. S. Park・H. C. Cho・Y. S. Che・○J. K. Rhee(Dongguk Univ.)

4. The Effect of He Gas on the Hydrogen Content and Passivation of
GaAs PHEMT with SiN Films
J. W. Shin・Y. S. Yoon・S. D. Lee・○J. K. Rhee(Dongguk Univ.)

5. Optical Control of p-Channel MODFET
H.J.Kim・I.K.Han・○J.I.Lee(KIST)・D.M.Kim(Kookmin Univ.)

6. [Invited] Improvement of Memory Window in YMnO_3 Ferroelectric
   Gate FET
   ○Yong Tae Kim・Ik Soo Kim・Young K. Park(Korea Institute of
   Science and Technology)

7. Optimization of Device Parameters for Ferroelectric-gate FETs
   Using SrBi_2Ta_2O_9 and SrTa_2O_6/SiON Buffer Layer
   ○Eisuke Tokumitsu・Kojiro Okamoto・Hiroshi Ishiwara
   (Tokyo Institute of Technology)

8. Calculation of Mobile Charge Density in Ferroelectric Films
   Using TVS(Triangular Voltage Sweep) Method
   ○Kwang-Ho Kim・Yong-Seong Kim・Soon-Won Jung・Jin-Kyu Kim・
   Nam-Yeal Lee・Sang Hyun Jeong(Cheongju Univ)・
   Byung-Gon Yu・Won-Jae Lee・In Kyu You・Yil-Suk Yang
   (Electronics and Telecommunications Research Institute)

9. Ferroelectric Sputtering Technology for High-volume Ferroelectric
Memory Production
○Koukou Suu(ULVAC)

10. Plasma-MOCVD Processing of Ferroelectric Sr_2Bi_2Ta_2O_9 Films
and Their Electrical Properties
○B. K. Moon・K. Hironaka・C. Isobe・S. Hishikawa(Sony)

29日午後

11. [Invited] SiGe HBT Technology and Applications for Communication
    ○Byuung Ryul Ryum・Deok-Ho Cho・Tae-Hyun Han・Soo-Min Lee・
    Seung-Ho Lee・Young-Hyun Kim・Kyung-Sik Baek・Suk-Chan・Song・
    Gil-Jae Lee・Kyung-Jun Eo・Chang-Uk Kim
    (Advanced Semiconductor Business)

12. [Invited] Non-Self-Aligned InP/InGaAs HBT Technology and Its
Application to High-Speed Digital ICs
○Hiroki Nakajima,・Eiichi Sano・Minoru Ida・Shoji Yamahata(NTT)

13. A Flip-Chip Packaged GaAs Switch IC Using 0.2um-Gate MODFET
○Kazuo Miyatsuji・Satoshi Makioka・Daisuke Ueda
(Matsushita Electronics)

14. PHEMT Super Low Noise MMIC Amplifier for 5.8 GHz HIPER LAN
    Applications
    B.G. Choi・Y.S. Lee・○C.S. Park(Information and Communications
    Univ.)・K.S. Yoon(Korea Univ.)

15. A Very High Gain C-band MMIC LNA Using 0.25um Pseudomorphic HEMT
Y.S. Lee・B.G. Choi・○C.S. Park(Information and Communications
Univ.)

16. High Performance MMIC Power Amplifier for BWLL Applications
H. C. Bae・J. S. Yoon・D. An・○J. K. Rhee(Dongguk Univ.)

30日午前

1. [Invited] SMC of a-Si in an Electric Field and Its Application to TFT
○Jin Jang・S.J. Park・S.Y. Yoon・K.S. Cho(Kyung Hee University)

2. Reliability of Low Temperature Poly-Si TFT under Dynamic Stress
   ○Yukiharu Uraoka・Tomoaki Hatayama・Takashi Fuyuki(Nara Institute
   of Science and Technology)・
   Tetsuya Kawamura・Yuji Tsuchihashi(Matsusita Electric)

3. High Performance CMOS Circuits Fabricated by Low Temperature Poly-Si
   TFTs on a Glass Substrate
   ○Michiko Takei・Tatsuya Uematsu・Kenichi Yoshino・Fumiyo Takeuchi・
   Yasuyoshi Mishima・Nobuo Sasaki(Fujitsu)

4. Crystal Growth of Low-Temperature Process Poly-Si by Excimer Laser
   Annealing - Dependences of Poly-Si Grain on Energy Density and
   Shot Number -
   ○Naoto Matsuo・Naoya Kawamoto・Ryou Taguchi(Yamaguchi Univ.)・
   Hisashi Abe・Tomoyuki Nouda・Hiroki Hamada(Sanyo Electric)

5. MOS Memory Using Si Nanocrystals Formed by Wet Etching of
   Poly-Silicon Along Grain Boundaries
   ○Seong-jong Yoo(KAIST)・Jongho Lee(Wonkwang Univ.)・
   Hyungcheol Shin(KAIST)

6. A 4 kV SiC Epitaxial PN Junction Diode with a Low On-Resistance
○Keiko Fujihira・Satoshi Tamura・Tsunenobu Kimoto・
Hiroyuki Matsunami(Kyoto Univ.)

7. Excimer Laser Doping for ZnO pn Diode Fabrication
○Toru Aoki(Shizuoka Univ.)・David C. Look(Wright State Univ.)・
Yoshinori Hatanaka(Shizuoka Univ.)

8. 1/f Noise in Schottky Barrier Structure
○J.I.Lee・I.K.Han・H.J.Kim(KIST)

9. Characterisation of Semiconductor Structures in the VUV-UV Wavelength
   Range Using Spectroscopic Ellipsometry and Spectroscopic Photometry
   ○Pierre Boher・J. P. Piel・P. Evrard・C. Defranoux・J. L. Sthele(SOPRA)・
   Y. Suzuki・M. Kamiyama・S. Sakano(SEIKA)

10. Deep Sub-um Scale Photoluminescence Image of Wide Bandgap Materials
by Cryogenic Scanning Optical Microscope
○Masahiro Yoshimoto・Junji Saraie(Kyoto Institute of Technology)

11. Fabrication and Device Application of Surface Acoustic Wave Coupled
    with Semiconductor
    ○Chinami Kaneshiro・T. Suda・Y.Aoki・C.Hong・K.Koh・K. Hohkawa
    (Kanagawa Institute of Technology)

30日午後

12. A 0.5-um-rule Thin-film SOI Power MOSFET for Radio-frequency
Applications
○Satoshi Matsumoto・Yasushi Hiraoka・Tatsuo Sakai(NTT)

13. The Influence of Parasitic Bipolar Transistor on High-frequency
Performance of Thin-film SOI Power MOSFETs
○Yasushi Hiraoka・Satoshi Matsumoto・Tatsuo Sakai(NTT)

14. A Si RF Switch MMIC for the Cellular Frequency Band Using SOI-CMOS
Technology
○Atsushi Kanda・M. Muraguchi(NTT)

15. Photocurrent Amplification Using SOI-MOS Device
○Yuko Uryu・Tanemasa Asano(Kyushu Institute of Technology)

16. Ultra Shallow Boron Diffusion in SIMOX and UNIBOND Structures
○Hideo Uchida・Masaya Ichimura・Eisuke Arai
(Nagoya Institute of Technology)

☆　SDM研究会今後の予定　[　　]内は発表申込締切日

7月　休会

8月24日（木）、8月25日（金）
「超高速、低消費電力、VLSI技術／デバイス技術」　北見工大　[6月9日（金）］

9月21日（木）、9月22日（金）
「プロセス・デバイス・回路シミュレーション」　機械振興会館　[7月14日（金）］