Summary
International Symposium on Antennas and Propagation
2010
Session Number:3TD2
Session:
Number:3TD2-4
Equivalent Circuit Modelling of RF MEMS Series DC-Contact Switch and Actuated Voltage Analysis
Shijie Liu, Jie Zhang, Wenquan Che,
pp.-
Publication Date:2010/11/23
Online ISSN:2188-5079
Summary:
Radio Frequency Micro electromechanical System (RF MEMS) are RF circuits manufactured with MEMS technology, taking features of compactness, light weight, zero DC power consumption and very high cut-off frequency, and therefore demonstrate huge application potentiality in wireless communication and microwave fields. Among of them, RF switches are key elements in the process of microwave and high frequency signals switching. Many researches on the equivalent circuits of the RF MEMS switch have been made. However, almost all of them were built after the switches were designed and fabricated and were developed by fitting the measured S parameters. Nevertheless, these models can not provide useful guidance for the design of RF MEMS switches, the value of the elements in the equivalent circuits depend on the measured S parameters, not on the geometrical parameters of the switch. In our work, the initial model of the RF MEMS switch is designed firstly, an equivalent circuit is thus proposed, the formulas for each elements inside are given. The equivalent circuit is numerically simulated with ADS, while the practical structure of the switch is simulated by HFSS. Good agreement can be observed between these two results, indicating the accuracy of the equivalent circuits and the design validity for the proposed switch.