Summary
International Symposium on Antennas and Propagation
2008
Session Number:2D05
Session:
Number:2D05-2
An Ultra-wideband CMOS Low-noise Amplifier with On-chip ESD Protection
Yu-Tsung Lo, Jean-Fu Kiang,
pp.-
Publication Date:2008/10/27
Online ISSN:2188-5079
Summary:
Ultra-wideband (UWB) radio technology can achieve high data rate with low radiation power. Many UWB LNAs have been proposed recently, but most of them are lack of ESD protection. In this work, an UWB LNA covering the bandwidth of 3.1-10.6 GHz is proposed. Sufficient gain is needed to lower the input-referred noise from the subsequent stages of the receiver. The noise figure of the LNA must be minimized to enhance its sensitivity and data rate. The proposed LNA is fully protected at RF ports and dc pads using the inductors and gate-couple NMOS [1], respectively