Summary
IEICE Information and Communication Technology Forum
2015
Session Number:SESSION2
Session:
Number:SESSION2-1
Nanowires for High-Speed Nanoelectronics and Nanophotonics
Werner Prost,
pp.-
Publication Date:2015-08-31
Online ISSN:2188-5079
DOI:10.34385/proc.22.SESSION2-1
Summary:
The application of epitaxial compound semiconductor nanowire heterostructures for low-energy, high-speed nanoelectronics and nanophotonics will be presented. GaN and related III-nitrides are nowadays the material of choice for the fabrication of high brightness light emitting diodes (LEDs). Recently, a GaN nanowire based GaInN/GaN multi quantum well LED structure has been developed on insulating sapphire by a self-assembled MOVPE approach. Commonly, the c-plane growth is used for both nanowire- and layer-based growth for GaN based LED. The c-plane, however, exhibits a strong internal electrical field due to spontaneous polarization, causing long carrier life-times. Presently, the 3-dB modulation bandwidth of any high performance GaN LED is limited to about 200-300 MHz. This issue may be overcome by the access to the m-plane that is intrinsically free from strong internal electrical field. We present the MOVPE growth, the fabrication, and the electroluminescence performance above 1 GHz of an m-plane core-shell p-i-n InGaN/GaN quantum well nanowire LED grown on conductive n-Silicon (111) substrates providing high-speed LEDs suitable for polymer fiber optical communication. In addition, novel heterogeneous integration schemes for the implementation of nanowire devices in existing circuits are presented and both an inverter circuit and a sample & hold circuit function is experimentally confirmed. The nanowire is an extremely versatile tool in nanophotonics. The nanowire can uniquely produce and absorb light. For the light it can serve at the mean time both as a waveguide and a resonator, respectively. Hence, compound semiconductor nanowires open up a powerful tool box for the development of future nanophotonic devices and circuits.