Summary
IEICE Information and Communication Technology Forum
2016
Session Number:A5
Session:
Number:A5-5
60 GHz Front-end Components in 130 nm CMOS Technology For Broadband Wireless Communication
Vasilis Kolios, Konstantinos Giannakidis, Grigorios Kalivas,
pp.-
Publication Date:2016-10-01
Online ISSN:2188-5079
Summary:
This paper presents two front-end key components in 130 nm RF CMOS technology for 60 GHz applications: a single balanced mixer with high Conversion Gain (CG), reduced Noise Figure (NF) and low power consumption, and an LC cross coupled Voltage Controlled Oscillator (VCO) with very good linearity, considering Vctrl, and very low Phase Noise (PN). In both circuits, are employed custom designed inductors and balun structures in order to enhance their performance. The inductor achieves an inductance of 198 pH and a quality factor (Q) of 30, at 30 GHz, and the balun shows less than 1o and less than 0.2 dB phase and amplitude imbalance, respectively, from 57 to 66 GHz. The mixer shows a conversion gain greater than 15 dB and a noise figure lower than 12 dB. In addition, the VCO achieves a phase noise lower than -106 dBc/Hz at 1MHz offset, and shows great linearity for the entire band. Both circuits are biased with a 1.2 V supply voltage and the total power consumption is about 10.6 mW for the mixer and 10.92 mW for the VCO.