Summary
International Symposium on Antennas and Propagation
2013
Session Number:FA-2(D)
Session:
Number:FA-2(D)-3
Crosstalk Analysis of Through Silicon Vias With Low Pitch-to-diameter ratio in 3D-IC
Sheng Liu, Jianping Zhu, Yongrong Shi, Xing Hu, Wanchun Tang,
pp.-
Publication Date:2013/10/22
Online ISSN:2188-5079
DOI:10.34385/proc.54.FA-2(D)-3
Summary:
An equivalent circuit model for low pitch-todiameter ratio (P/D) through silicon via (TSV) in three - dimensional integrated circuit (3-D IC) is proposed in this paper. The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array. The metal-oxidesemiconductor (MOS) capacitance of TSV is also considered. With this model, the crosstalk of TSV array can be fully analyzed regardless of the pitch. The results by this model agree well with those by the electromagnetic simulations up to 40GHz.