Summary

Proceedings of the 2012 International Symposium on Nonlinear Theory and its Applications

2012

Session Number:D2L-A

Session:

Number:824

Bifurcation Structure of a Class 2 Silicon Nerve Membrane Integrated Circuit

Munehisa Sekikawa,  Takashi Kohno,  

pp.824-827

Publication Date:

Online ISSN:2188-5079

DOI:10.15248/proc.1.824

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We conducted experimental measurements of the silicon nerve membrane integrated circuit that was designed and fabricated through the TSMC 0.35 μm CMOS technology. The responses of the silicon nerve membrane, which possesses Class 2 excitability, to periodic pulse stimuli are investigated experimentally and the two-parameter bifurcation diagram is obtained in this paper. The bifurcation diagram shows the bifurcation structure of fundamental harmonic and sub-harmonic synchronization regions, and the emergence of period-adding bifurcations. It is also found that the fabricated Class 2 silicon nerve membrane exhibits nonperiodic behaviors subject to some periodic pulse stimuli.

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