Summary
IEICE Information and Communication Technology Forum
2014
Session Number:ICT2
Session:
Number:ICT2-1
Compound semiconductor nanowires for electronics and optoelectronics
Werner Prost,
pp.-
Publication Date:2014-08-10
Online ISSN:2188-5079
Summary:
Epitaxially grown semiconductor nanowires have attracted considerable interest. Among them III/V nanowires are uniquely suited for high carrier mobility electronic devices and efficient energy transformation, both from electrical-to-light and from light-to-electrical energy. The application of InAs and GaAs based nanowires for electronic and optoelectronic applications is reviewed. Selected examples are presented underlining the specific advantages of InAs and GaAs nanowires. A novel heterogeneous integration scheme for heterogeneous nanowire transistor implementation in existing circuits is proposed. Both an inverter circuit and a sample & hold circuit function is experimentally confirmed. The improvement of minority carrier transport is found to be the key parameter for future application of nanowire solar cells. At present, the extremely robust performance under very intense illumination (> 1,500 suns) may stimulate industrial applications.