Summary
International Symposium on Nonlinear Theory and Its Applications
2015
Session Number:C2L-F
Session:
Number:C2L-F-4
Self-Sustained Oscillation in Half Bridge Circuit of Silicon Carbide Devices with Inductive Load
Tatsuya Yanagi, Hirotaka Otake, Ken Nakahara, Takashi Hikihara,
pp.876-879
Publication Date:2015/12/1
Online ISSN:2188-5079
Summary:
This paper discusses self turn-on and its consequence of self-sustained oscillations observed in a half-bridge configuration of SiC (Silicon Carbide) MOSFETs in experiments and circuit simulation. The oscillation is triggered by self turn-on at the non-driven device, due to its large feedback capacitance and relatively low threshold voltage. The generated oscillation seems to be maintained by feed through resonance caused by parasitic inductances and capacitances. We do circuit simulation for the oscillation, and discuss how the oscillation develops and the trajectory of non-driven device moves.