Summary
International Symposium on Nonlinear Theory and Its Applications
2016
Session Number:A3L-F
Session:
Number:A3L-F-2
A Design Example of Class-E Based Gate Driver for High Frequency Operation of SiC Power MOSFET
Michihiro Shintani, Yuchong Sun, Hiroo Sekiya, Takashi Sato,
pp.-
Publication Date:2016/11/27
Online ISSN:2188-5079
Summary:
Design of a class-E based gate driver has been presented for high frequency power converters using SiC power MOSFETs. Through numerical experiments, it is demonstrated that the proposed gate driver can eliminate its switching loss by zero voltage switching (ZVS) operation.