International Symposium on Nonlinear Theory and Its Applications
A Charge-Based SiC Power MOSFET Model Considering on-State Resistance
Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato,
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Accurate transistor model is the key component in designing efficient power converters. Its importance is increasing as the operating frequency of the converters become higher. A transistor model that accurately and compactly represents physical device behavior is required. In this paper, we propose a charge-based transistor model that includes parasitic resistances of vertical diffused SiC power MOSFET. Through experiments using a commercial device, good agreement has been observed between measurement and simulation in I-V, C-V, and transient characteristics.