Summary
International Symposium on Nonlinear Theory and Its Applications
2016
Session Number:A3L-F
Session:
Number:A3L-F-1
A Charge-Based SiC Power MOSFET Model Considering on-State Resistance
Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato,
pp.-
Publication Date:2016/11/27
Online ISSN:2188-5079
Summary:
Accurate transistor model is the key component in designing efficient power converters. Its importance is increasing as the operating frequency of the converters become higher. A transistor model that accurately and compactly represents physical device behavior is required. In this paper, we propose a charge-based transistor model that includes parasitic resistances of vertical diffused SiC power MOSFET. Through experiments using a commercial device, good agreement has been observed between measurement and simulation in I-V, C-V, and transient characteristics.