Summary
2011 International Symposium on Nonlinear Theory and Its Applications
2011
Session Number:A3L-A
Session:
Number:A3L-A5
The Influence of Charge Traps Parameters on Bifurcation Scenario of Nonlinear Semiconductor Oscillator
Manturov A.O., Glukhovskaya E.E., Akivkin N.G.,
pp.172-175
Publication Date:2011/9/4
Online ISSN:2188-5079
Summary:
In this work the some results of numerical simulations of a traps parameters influence on complex oscillations in nonlinear semiconductor oscillator are presented. The semiconductor structure that used in nonlinear semiconductor oscillator was Metal-Insulator-Semiconductor structure (MIS-structure). As it were shown the parameters of charge storage traps make essential influence to period-doubling and chaotic oscillation onset.