Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:T3-2
Session:
Number:5147
A Nanopower Full CMOS Sub-Bandgap Voltage Reference
Chang-Bum Park, Shin-Il Lim ,
pp.591-594
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
This paper describes a sub-1V nanopower full CMOS bandgap reference (BGR) operated in subthreshold region. Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The circuits are implemented in 0.18um CMOS process. The simulation results show that the proposed sub-BGR generates a reference output voltage of 358mV, obtaining temperature coefficient of 32 ppm/C in -40ﾂｰC to 120ﾂｰC of temperature range. The circuits consume 43nW at 1V supply and operation range is 0.65 to 1.8V.