Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:T3-2
Session:
Number:5146
New Approach for Detection and Storage an ESD event by using ReRAM cell
Gi-Doo Lee, Jung-Hoon Chun ,
pp.587-590
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
This work proposes a new concept of a circuit that can detect an ESD and save the ESD level by using ReRAM cell. The circuit is configured such that an appropriate voltage level corresponding to the ESD level is applied to both ends of the ReRAM cell, when an ESD event occurs. Through this structure, the resistive state of the ReRAM cell is changed according to the voltage level. The ReRAM cell having a non-volatile characteristic can be maintained the resistance value changed in the ESD event regardless of the power state, and the ESD levels can be identified by the level of the resistance. Using the proposed circuit, a mothod of preventing the soft error caused by sytem level ESD in mobile device is introduced.