Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:M3-3
Session:
Number:M3-3-5
Reconfigurable U-shape Tunnel FET
Myounggon Kang, Won Joo Lee, Yoon Kim ,
pp.327-330
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
In this paper, we propose and validate a novel design of dynamically reconfigurable tunnel field-effect transistor having a U-shape channel and three gates (two polarity gates and one control gate). The polarity gate acts on the side regions of the channel, swithcing the device polarity dynamically between n and p-type. Also, the conduction mechanism of proposed device is based on the tunnel FET operation that features low-leakage current, low power consumption, and scalable subthreshold swing (SS). To improve on-current drivablity and suppress short-channel effect, we propose a unique U-shape channel structure. The designed device provides ~30ﾃｺI higher on-current(Ion) and an average subthreshold swing of 41.8 mV/dec.