Summary

International Technical Conference on Circuits/Systems, Computers and Communications

2016

Session Number:M3-3

Session:

Number:M3-3-4

Self-rectifying Resistive Switching Characteristics in Cu/IGZO/Si Structure

Su-Hyun Bang,  Sungjun Kim,  Hyungjin Kim,  Byung-Gook Park ,  

pp.323-326

Publication Date:2016/7/10

Online ISSN:2188-5079

DOI:10.34385/proc.61.M3-3-4

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Summary:
We investigate the resistive switching and self-rectifying characteristics of proposed RRAM. We fabricate RRAMs using Cu/IGZO/Si structure. The bilayer film that consists of oxygen-deficient and oxygen-rich α-IGZO, and the monolayer film of oxygen deficient α-IGZO are fabricated by controlling oxygen concentration. Proposed RRAM cells show the typical hysteresis I-V curve including set and reset operation under the DC sweep mode. Furthermore, self-rectifying phenomenon is observed.