Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:M3-3
Session:
Number:M3-3-4
Self-rectifying Resistive Switching Characteristics in Cu/IGZO/Si Structure
Su-Hyun Bang, Sungjun Kim, Hyungjin Kim, Byung-Gook Park ,
pp.323-326
Publication Date:2016/7/10
Online ISSN:2188-5079
DOI:10.34385/proc.61.M3-3-4
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Summary:
We investigate the resistive switching and self-rectifying characteristics of proposed RRAM. We fabricate RRAMs using Cu/IGZO/Si structure. The bilayer film that consists of oxygen-deficient and oxygen-rich α-IGZO, and the monolayer film of oxygen deficient α-IGZO are fabricated by controlling oxygen concentration. Proposed RRAM cells show the typical hysteresis I-V curve including set and reset operation under the DC sweep mode. Furthermore, self-rectifying phenomenon is observed.