Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:M1-3
Session:
Number:M1-3-1
Fabrication of Planar-Type Ti/TiOx/Ti Resistive Switching Device by SPM Local Oxidation
Rachsak Sakdanuphab, Aparporn Sakulkalavek ,
pp.45-48
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
Metal/Insulator/Metal (MIM) junctions are promising to be a resistive random access memory (RRAM). Almost MIM junction has been fabricated by stack-multilayer depositions. In this work, we study the planar-type Ti/TiOx/Ti junctions prepared by Ti sputtered film on SiO2/Si wafer, following with photolithography process, and local anodic oxidation by scanning probe microscopy (SPM). The growth and characterization of TiOx nanowires were investigated by atomic force microscopy (AFM). The oxide growth mechanism is proposed based on anodic oxidation theory. A resistive switching (RS) behavior of the junction was obtained by current-voltage measurement. Our results show the ability of SPM to growth TiOx nanowires as an insulator and the junctions have a resistive switching ability that can switch from a high-resistance state (HRS) to a low-resistance state (LRS) and from LRS to HRS.