Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2016
Session Number:M1-2
Session:
Number:M1-2-3
Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control
Yusuke Yoshida, Masaru Kudo, Kimiyoshi Usami ,
pp.41-44
Publication Date:2016/7/10
Online ISSN:2188-5079
Summary:
Memory which can reduce power consumption and realizes ultra-low voltage operation is required. This paper describes a design of low-power Standard Cell Memory (SCM) using Silicon-on-Thin-BOX (SOTB). Simulation results demonstrated that our SCM can reduce leakage current by 53% and energy consumption at the active mode by 70-85% as compared to the SRAM with the same circuit speed by body bias control. We also found that the SCM can operate at the voltage lower than 0.2V under process variation.