| Presentation | 2015-03-25 Development of High Power Rectifier with GaN Schottky Diode Takaki Nishimura, Naoki Shinohara, Tomohiko Mitani, Masaki Ueno, Yuusuke Yoshizumi, Masaya Okada, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Microwave power transfer (MPT) has two advantages. First, the direction to transfer the power can be handled by phased array antenna without mechanical control. Second, the transfer efficiency between far points can keep higher than the other way of wireless power transfer. Because of these advantages, MPT system to an electric vehicle is proposed. A rectifier is necessary to covert RF power to DC for the receiving side. The RF-DC conversion efficiency has a peak owning to the input power. The optimum input power depends on the breakdown voltage of a diode used in the rectifier. In MPT to electric vehicle, kW class power is transferred, so the diode is needed to endure high power. Therefore, we aimed to develop a high power rectifier using GaN schottky diodes which is good at high power and high frequency. We noticed transit time (T_t) which is one of SPICE parameters of a diode and contributes to capacitance of a diode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | microwave power transfer / high power / rectifier / GaN schottky diode / transit time (T_t) |
| Paper # | WPT2014-102 |
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| Conference Information | |
| Committee | WPT |
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| Conference Date | 2015/3/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Wireless Power Transfer(WPT) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of High Power Rectifier with GaN Schottky Diode |
| Sub Title (in English) | |
| Keyword(1) | microwave power transfer |
| Keyword(2) | high power |
| Keyword(3) | rectifier |
| Keyword(4) | GaN schottky diode |
| Keyword(5) | transit time (T_t) |
| 1st Author's Name | Takaki Nishimura |
| 1st Author's Affiliation | Kyoto University, Research Institute of Sustainable Humanosphere() |
| 2nd Author's Name | Naoki Shinohara |
| 2nd Author's Affiliation | Kyoto University, Research Institute of Sustainable Humanosphere |
| 3rd Author's Name | Tomohiko Mitani |
| 3rd Author's Affiliation | Kyoto University, Research Institute of Sustainable Humanosphere |
| 4th Author's Name | Masaki Ueno |
| 4th Author's Affiliation | Sumitomo Electric Industries, LTD. |
| 5th Author's Name | Yuusuke Yoshizumi |
| 5th Author's Affiliation | Sumitomo Electric Industries, LTD. |
| 6th Author's Name | Masaya Okada |
| 6th Author's Affiliation | Sumitomo Electric Industries, LTD. |
| Date | 2015-03-25 |
| Paper # | WPT2014-102 |
| Volume (vol) | vol.114 |
| Number (no) | 524 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |