| Presentation | 2015-03-02 A High Stability and Low Leakage Current Six-Transistor CMOS SRAM Employing a Single Low Supply Voltage Nobuaki Kobayashi, Ryusuke Ito, Koji Motojima, Tadayoshi Enomoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, not only to expand both "write" and "read" stabilities, but also to achieve a low standby power dissipation (PST) and a high static-noise margin in a single power supply, 90-nm, 2-kbit, six-transistor CMOS SRAM. The SVL circuit can adaptively lower and higher a word-line voltage for "read" and "write" operations, respectively. It can also adaptively lower and higher a memory cell supply voltage for "write" and "hold" operations, and the "read" operation, respectively. It is confirmed that the SVL circuit can not only expand "read" and "write" margins of the SRAM, but also significantly reduce leakage currents. A Si area overhead of the SVL circuit is only 1.383 % of the conventional SRAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / SRAM / high stability / low leakage current / low supply voltage / self-controllable voltage level (SVL) circuit / area overhead |
| Paper # | VLD2014-160 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2015/2/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Stability and Low Leakage Current Six-Transistor CMOS SRAM Employing a Single Low Supply Voltage |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | SRAM |
| Keyword(3) | high stability |
| Keyword(4) | low leakage current |
| Keyword(5) | low supply voltage |
| Keyword(6) | self-controllable voltage level (SVL) circuit |
| Keyword(7) | area overhead |
| 1st Author's Name | Nobuaki Kobayashi |
| 1st Author's Affiliation | Graduate School of Science and Engineering, Chuo University() |
| 2nd Author's Name | Ryusuke Ito |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
| 3rd Author's Name | Koji Motojima |
| 3rd Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
| 4th Author's Name | Tadayoshi Enomoto |
| 4th Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
| Date | 2015-03-02 |
| Paper # | VLD2014-160 |
| Volume (vol) | vol.114 |
| Number (no) | 476 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |