| Presentation | 2015-01-16 Modeling of tarps in GaN HEMT by transient response measurement and TCAD simulation Yutaro YAMAGUCHI, Takuma NANJO, Hidetoshi KOYAMA, Yoshitaka KAMO, Koji YAMANAKA, Toshiyuki OISHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurement and TCAD simulation. The two type devices which differ only in the concentration of Fe at GaN buffer layer was prepared, and the transient response from OFF state to ON state was measured at various temperature. Trap energy and capture cross-section at GaN buffer layer were extracted by analysis of time constant of traps. And, by using TCAD simulation and these trap parameters, the relationship with traps at GaN buffer layer and transient response was analyzed. In the result, it was found that transient current was increased because electrons which were captured in traps at GaN buffer at OFF state were emitted at ON state, and transient drain current was increased. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / trap / transient response / TCAD simulation / Fe / buffer |
| Paper # | ED2014-129,MW2014-193 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2015/1/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modeling of tarps in GaN HEMT by transient response measurement and TCAD simulation |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | trap |
| Keyword(3) | transient response |
| Keyword(4) | TCAD simulation |
| Keyword(5) | Fe |
| Keyword(6) | buffer |
| 1st Author's Name | Yutaro YAMAGUCHI |
| 1st Author's Affiliation | Mitsubishi electric corp. Information technology R&D center() |
| 2nd Author's Name | Takuma NANJO |
| 2nd Author's Affiliation | Mitsubishi electric corp. Advanced technology R&D center |
| 3rd Author's Name | Hidetoshi KOYAMA |
| 3rd Author's Affiliation | Mitsubishi electric corp. High frequency & optical device works |
| 4th Author's Name | Yoshitaka KAMO |
| 4th Author's Affiliation | Mitsubishi electric corp. High frequency & optical device works |
| 5th Author's Name | Koji YAMANAKA |
| 5th Author's Affiliation | Mitsubishi electric corp. Information technology R&D center |
| 6th Author's Name | Toshiyuki OISHI |
| 6th Author's Affiliation | Saga university |
| Date | 2015-01-16 |
| Paper # | ED2014-129,MW2014-193 |
| Volume (vol) | vol.114 |
| Number (no) | 392 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |