Presentation 2015-01-22
Growth of hexagonal boron nitride films by CVD for the application of deep ultraviolet light emitters
Atsushi MASUDA, Naoki UMEHARA, Takaki SHIMIZU, Tetsuya KOUNO, Hiroko KOMINAMI, Yoichiro NAKANISHI, Kazuhiko HARA,
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Abstract(in English) The hexagonal boron nitride (h-BN) thin films were grown on a c-plane sapphire substrate by chemical vapor deposition using BCl_3 and NH_3 as sources at substrate temperatures from 900 to 1400 ℃ under 20 and 10 kPa. X-ray diffraction and cathodoluminescence measurements have showed that the crystalline quality of the h-BN films depend strongly on growth pressure and temperature. The growth of single crystal films and the observation of exitonic emissions around 215 ran were achieved by low pressure CVD.
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Keyword(in English) hexagonal boron nitride / CVD / thin film / cathodoluminescence
Paper # EID2014-45
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Committee EID
Conference Date 2015/1/15(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Growth of hexagonal boron nitride films by CVD for the application of deep ultraviolet light emitters
Sub Title (in English)
Keyword(1) hexagonal boron nitride
Keyword(2) CVD
Keyword(3) thin film
Keyword(4) cathodoluminescence
1st Author's Name Atsushi MASUDA
1st Author's Affiliation Graduate School of Engineering, Shizuoka University()
2nd Author's Name Naoki UMEHARA
2nd Author's Affiliation Graduate School of Engineering, Shizuoka University
3rd Author's Name Takaki SHIMIZU
3rd Author's Affiliation Faculty of Engineering, Shizuoka University
4th Author's Name Tetsuya KOUNO
4th Author's Affiliation Graduate School of Engineering, Shizuoka University
5th Author's Name Hiroko KOMINAMI
5th Author's Affiliation Graduate School of Engineering, Shizuoka University
6th Author's Name Yoichiro NAKANISHI
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
7th Author's Name Kazuhiko HARA
7th Author's Affiliation Research Institute of Electronics, Shizuoka University:Graduate School of Science and Technology, Shizuoka University
Date 2015-01-22
Paper # EID2014-45
Volume (vol) vol.114
Number (no) 407
Page pp.pp.-
#Pages 4
Date of Issue