Presentation	2014-12-12 Resistive switching characteristics of NiO-based ReRAM after semi-forming process. Hiroki SASAKURA, Yusuke NISHI, Tatsuya IWATA, Tsunenobu KIMOTO,
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Abstract(in English)	In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO deposited with a proper oxygen gas flow rate were observed. In this work, resistive switching characteristics in the second mode, after semi-forming, were investigated. It was found that current after semi-forming fluctuated discretely by the quantized conductance G_0 (= 77.5 μS), and that the conductance values in most cells right after semi-forming were G_0 independent of the conductance in initial state G_ and cell area. In addition, the temperature dependence of the conductance G in the range of 77-400 K indicates that the values of G were identical to G_0 from 77 K to around room temperature (RT). Although the values increased with temperature from around RT to 400 K, G - G_ exhibited a constant value of G_0 even in the high temperature region. Therefore, it is suggested that a conductive filament including quantum point contact (QPC) is formed in parallel to the bulk region by semi-forming. Furthermore, conductance in a second mode showed similar temperature dependence to that in high resistance state after second forming. The result reveals that resistive switching after second forming is involved in the formation and rupture of some filaments additionally formed by second forming instead of any filaments including QPCs.
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Keyword(in English)	ReRAM / Nickel oxide / Quantum point contact
Paper #	EID2014-38,SDM2014-133
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Committee	EID
Conference Date	2014/12/5(1days)
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Registration To	Electronic Information Displays (EID)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Resistive switching characteristics of NiO-based ReRAM after semi-forming process.
Sub Title (in English)
Keyword(1)	ReRAM
Keyword(2)	Nickel oxide
Keyword(3)	Quantum point contact
1st Author's Name	Hiroki SASAKURA
1st Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name	Yusuke NISHI
2nd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name	Tatsuya IWATA
3rd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
4th Author's Name	Tsunenobu KIMOTO
4th Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University:Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University
Date	2014-12-12
Paper #	EID2014-38,SDM2014-133
Volume (vol)	vol.114
Number (no)	359
Page	pp.pp.-
#Pages	6
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