Presentation | 2014-12-12 Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seok LEE, Satoru Kishida, Kentaro Kinoshita, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupture of conductive filament consisting of oxygen vacancies, V_os. However, driving forces that migrate oxygen vacancies have been not elucidated yet. In this study, we tried to separate driving forces that cause V_o diffusion, concentration gradient (concentration diffusion) and temperature gradient (thermodiffusion), by generating various temperature distribution around the filament by injecting voltage pulses with various wave forms. As a result, it was shown that concentration diffusion and thermodiffusion are always competing each other in ReRAM, and magnitude relation of concentration diffusion and thermodiffusion decides which reset occurs or set occurs is decided by the magnitude relation of concentration diffusion and thermodiffusion. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Resistive random access memory / ReRAM / concentration diffusion / thermodiffusion |
Paper # | EID2014-37,SDM2014-132 |
Date of Issue |
Conference Information | |
Committee | EID |
---|---|
Conference Date | 2014/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electronic Information Displays (EID) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study of driving forces that cause resistive switching of binary transition metal oxide memory |
Sub Title (in English) | |
Keyword(1) | Resistive random access memory |
Keyword(2) | ReRAM |
Keyword(3) | concentration diffusion |
Keyword(4) | thermodiffusion |
1st Author's Name | Ryosuke Koishi |
1st Author's Affiliation | Ibttori University() |
2nd Author's Name | Takumi Moriyama |
2nd Author's Affiliation | Ibttori University:Tottori Integrated Frontier Research Center (TiFREC) |
3rd Author's Name | Kouhei Kimura |
3rd Author's Affiliation | Ibttori University |
4th Author's Name | Kouki Kawano |
4th Author's Affiliation | Ibttori University |
5th Author's Name | Hidetoshi Miyashita |
5th Author's Affiliation | Ibttori University:Tottori Integrated Frontier Research Center (TiFREC) |
6th Author's Name | Sang-Seok LEE |
6th Author's Affiliation | Ibttori University:Tottori Integrated Frontier Research Center (TiFREC) |
7th Author's Name | Satoru Kishida |
7th Author's Affiliation | Ibttori University:Tottori Integrated Frontier Research Center (TiFREC) |
8th Author's Name | Kentaro Kinoshita |
8th Author's Affiliation | Ibttori University:Tottori Integrated Frontier Research Center (TiFREC) |
Date | 2014-12-12 |
Paper # | EID2014-37,SDM2014-132 |
Volume (vol) | vol.114 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |