| Presentation | 2014-12-12 Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi ASADA, Takafumi OKUDA, Tsunenobu KIMOTO, Jun SUDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investigated. The current gain increased with reducing the temperature from 460 to 200 K and exhibited the maximum value of 1200 at 200 K. The higher current gain at the low temperature can be ascribed to an enhanced incomplete ionization of aluminum acceptors in the base layer, resulting in an increase of injection efficiency. However, the current gain decreased from 1200 at temperatures below 200 K. This is caused by high injection condition owing to low hole density in the base layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC BJT / Current gain / High injection |
| Paper # | EID2014-35,SDM2014-130 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2014/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature Dependence of Current Gain in 4H-SiC BJTs |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC BJT |
| Keyword(2) | Current gain |
| Keyword(3) | High injection |
| 1st Author's Name | Satoshi ASADA |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Takafumi OKUDA |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Tsunenobu KIMOTO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Jun SUDA |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2014-12-12 |
| Paper # | EID2014-35,SDM2014-130 |
| Volume (vol) | vol.114 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |