Presentation 2014-12-12
Frequency Dependence of Split C-V Characteristics in Si-face 4H-SiC n-MOSFETs
Hiroto YUKI, Hiroshi YANO,
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Abstract(in English) Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range of 1 - 1M Hz. The split C-V characteristics for SiC-MOSFETs showed frequency dependence due to a large interface state density near the conduction band edge. The impact of the interface properties produced by different oxidation methods including NO- and POCl_3-annealing on the frequency dependence in the split C-V characteristics is discussed in this study. We revealed that a very low frequency is needed for accurate evaluation of channel charge density.
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Keyword(in English) 4H-SiC / MOS / POCl_3-anneal / Split C-V
Paper # EID2014-33,SDM2014-128
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Frequency Dependence of Split C-V Characteristics in Si-face 4H-SiC n-MOSFETs
Sub Title (in English)
Keyword(1) 4H-SiC
Keyword(2) MOS
Keyword(3) POCl_3-anneal
Keyword(4) Split C-V
1st Author's Name Hiroto YUKI
1st Author's Affiliation Nara Institute of Science and Technology()
2nd Author's Name Hiroshi YANO
2nd Author's Affiliation University of Tsukuba
Date 2014-12-12
Paper # EID2014-33,SDM2014-128
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue