Presentation | 2014-12-12 Frequency Dependence of Split C-V Characteristics in Si-face 4H-SiC n-MOSFETs Hiroto YUKI, Hiroshi YANO, |
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Abstract(in English) | Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range of 1 - 1M Hz. The split C-V characteristics for SiC-MOSFETs showed frequency dependence due to a large interface state density near the conduction band edge. The impact of the interface properties produced by different oxidation methods including NO- and POCl_3-annealing on the frequency dependence in the split C-V characteristics is discussed in this study. We revealed that a very low frequency is needed for accurate evaluation of channel charge density. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 4H-SiC / MOS / POCl_3-anneal / Split C-V |
Paper # | EID2014-33,SDM2014-128 |
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Committee | EID |
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Conference Date | 2014/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Frequency Dependence of Split C-V Characteristics in Si-face 4H-SiC n-MOSFETs |
Sub Title (in English) | |
Keyword(1) | 4H-SiC |
Keyword(2) | MOS |
Keyword(3) | POCl_3-anneal |
Keyword(4) | Split C-V |
1st Author's Name | Hiroto YUKI |
1st Author's Affiliation | Nara Institute of Science and Technology() |
2nd Author's Name | Hiroshi YANO |
2nd Author's Affiliation | University of Tsukuba |
Date | 2014-12-12 |
Paper # | EID2014-33,SDM2014-128 |
Volume (vol) | vol.114 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 5 |
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