Presentation | 2014-12-12 Formation of nc-Si in SiOx by Soft X-ray Irradiation Fumito KUSAKABE, Shota HIRANO, Akira HEYA, Naoto MATSUO, Kazuhiro KANDA, Takayasu MOTIZUKI, Shuji MIYAMOTO, Kazuyuki KOHAMA, Kazuhiro ITO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The low-temperature formation of nanocrystalline Si (nc-Si) in SiO_x is one of key technologies for the realization of high-quality solar cells. We proposed a low-temperature crystallization method by soft X-ray at BL07A in the synchrotron radiation facility, NewSUBARU. It is known that the crystallization temperature of amorphous Si (a-Si) film on SiO_2 substrate was reduced by about 100℃. The a-Si in SiO_x film was crystallized by atomic migration via electron excitation by soft X-ray irradiation at the photon energy near the core level of Si2p. The size of nc-Si prepared at 660℃ by soft X-ray irradiation was estimated to 16.8 nm from the peak position of Raman spectra. The nc-Si can be formed by soft X-ray irradiation at low temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Soft X-ray / nc-Si / Low-temperature crystallization / Raman scattering |
Paper # | EID2014-32,SDM2014-127 |
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Conference Information | |
Committee | EID |
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Conference Date | 2014/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation of nc-Si in SiOx by Soft X-ray Irradiation |
Sub Title (in English) | |
Keyword(1) | Soft X-ray |
Keyword(2) | nc-Si |
Keyword(3) | Low-temperature crystallization |
Keyword(4) | Raman scattering |
1st Author's Name | Fumito KUSAKABE |
1st Author's Affiliation | University of Hyogo() |
2nd Author's Name | Shota HIRANO |
2nd Author's Affiliation | University of Hyogo |
3rd Author's Name | Akira HEYA |
3rd Author's Affiliation | University of Hyogo |
4th Author's Name | Naoto MATSUO |
4th Author's Affiliation | University of Hyogo |
5th Author's Name | Kazuhiro KANDA |
5th Author's Affiliation | LASTI, University of Hyogo |
6th Author's Name | Takayasu MOTIZUKI |
6th Author's Affiliation | LASTI, University of Hyogo |
7th Author's Name | Shuji MIYAMOTO |
7th Author's Affiliation | LASTI, University of Hyogo |
8th Author's Name | Kazuyuki KOHAMA |
8th Author's Affiliation | Osaka University |
9th Author's Name | Kazuhiro ITO |
9th Author's Affiliation | Osaka University |
Date | 2014-12-12 |
Paper # | EID2014-32,SDM2014-127 |
Volume (vol) | vol.114 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |