Presentation | 2014-12-12 Characteristics of Ga-Sn-Oxide thin film Yuta KATO, Daiki NISHIMOTO, Tokiyoshi MATSUDA, Mutsumi KIMURA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Thin films of Ga-Sn-0 (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio at Ga : Sn = 1 : 3 were higher than 80 %. The sheet resistance was decreased with increasing deposition pressure. On the other hand, transmittance of GTO thin films with composition ratio at Ga: : Sn = 3 : 1 were decreased with increasing deposition pressure. Oxygen vacancy in GTO films were increased with increasing the deposition pressure. Change in the composition ratio of GTO during deposition process from target to the substrate increases the oxygen vacancy. The characteristics of GaSnO thin films depend on the deposition pressure and composition of target material. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Oxide semiconductor / GaSnO thin film / RF magnetron sputtering |
Paper # | EID2014-28,SDM2014-123 |
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Conference Information | |
Committee | EID |
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Conference Date | 2014/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics of Ga-Sn-Oxide thin film |
Sub Title (in English) | |
Keyword(1) | Oxide semiconductor |
Keyword(2) | GaSnO thin film |
Keyword(3) | RF magnetron sputtering |
1st Author's Name | Yuta KATO |
1st Author's Affiliation | Faculty of Sciense and Technology, Ryukoku University() |
2nd Author's Name | Daiki NISHIMOTO |
2nd Author's Affiliation | Faculty of Sciense and Technology, Ryukoku University |
3rd Author's Name | Tokiyoshi MATSUDA |
3rd Author's Affiliation | Faculty of Sciense and Technology, Ryukoku University |
4th Author's Name | Mutsumi KIMURA |
4th Author's Affiliation | Faculty of Sciense and Technology, Ryukoku University |
Date | 2014-12-12 |
Paper # | EID2014-28,SDM2014-123 |
Volume (vol) | vol.114 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |