Presentation 2014-12-12
Characteristics of Ga-Sn-Oxide thin film
Yuta KATO, Daiki NISHIMOTO, Tokiyoshi MATSUDA, Mutsumi KIMURA,
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Abstract(in English) Thin films of Ga-Sn-0 (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio at Ga : Sn = 1 : 3 were higher than 80 %. The sheet resistance was decreased with increasing deposition pressure. On the other hand, transmittance of GTO thin films with composition ratio at Ga: : Sn = 3 : 1 were decreased with increasing deposition pressure. Oxygen vacancy in GTO films were increased with increasing the deposition pressure. Change in the composition ratio of GTO during deposition process from target to the substrate increases the oxygen vacancy. The characteristics of GaSnO thin films depend on the deposition pressure and composition of target material.
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Keyword(in English) Oxide semiconductor / GaSnO thin film / RF magnetron sputtering
Paper # EID2014-28,SDM2014-123
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of Ga-Sn-Oxide thin film
Sub Title (in English)
Keyword(1) Oxide semiconductor
Keyword(2) GaSnO thin film
Keyword(3) RF magnetron sputtering
1st Author's Name Yuta KATO
1st Author's Affiliation Faculty of Sciense and Technology, Ryukoku University()
2nd Author's Name Daiki NISHIMOTO
2nd Author's Affiliation Faculty of Sciense and Technology, Ryukoku University
3rd Author's Name Tokiyoshi MATSUDA
3rd Author's Affiliation Faculty of Sciense and Technology, Ryukoku University
4th Author's Name Mutsumi KIMURA
4th Author's Affiliation Faculty of Sciense and Technology, Ryukoku University
Date 2014-12-12
Paper # EID2014-28,SDM2014-123
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 4
Date of Issue