Presentation 2014-12-12
Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device
Takaaki MATSUMOTO, Akito YOSHIKAWA, Shougo MIYAMURA, Haruki SHIGA, Tokiyosi MATSUDA, Mutsumi KIMURA, Tokuro OZAWA, Koji AOKI, Chih-Che KUO,
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Abstract(in English) Measurement devices for magnetic flux density utilizing Hall effect are actively studied. In this research, we measured dependences of the Hall voltages and currents on magnetic flux density of TFT-type poly-Si Hall devices, oxide semiconductor IGZO Hall devices, and TFT-type IGZO Hall devices. As a result, we were able to confirm the dependence on the magnetic flux density in the Hall voltage of all the devices. From these results, it is suggested that the poly-Si Hall devices and IGZO Hall devices can be potentially applied to the magnetic field sensors.
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Keyword(in English) Hall effect / Magnetic sensor / Poly-Si / IGZO / TFT
Paper # EID2014-27,SDM2014-122
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device
Sub Title (in English)
Keyword(1) Hall effect
Keyword(2) Magnetic sensor
Keyword(3) Poly-Si
Keyword(4) IGZO
Keyword(5) TFT
1st Author's Name Takaaki MATSUMOTO
1st Author's Affiliation Department of Electronics and Informatics, Ryukoku University()
2nd Author's Name Akito YOSHIKAWA
2nd Author's Affiliation Department of Electronics and Informatics, Ryukoku University
3rd Author's Name Shougo MIYAMURA
3rd Author's Affiliation Department of Electronics and Informatics, Ryukoku University
4th Author's Name Haruki SHIGA
4th Author's Affiliation Department of Electronics and Informatics, Ryukoku University
5th Author's Name Tokiyosi MATSUDA
5th Author's Affiliation Department of Electronics and Informatics, Ryukoku University
6th Author's Name Mutsumi KIMURA
6th Author's Affiliation Department of Electronics and Informatics, Ryukoku University
7th Author's Name Tokuro OZAWA
7th Author's Affiliation R&D Department. AU ODtronics Corporation Japan
8th Author's Name Koji AOKI
8th Author's Affiliation R&D Department. AU ODtronics Corporation Japan
9th Author's Name Chih-Che KUO
9th Author's Affiliation R&D Department. AU ODtronics Corporation Japan
Date 2014-12-12
Paper # EID2014-27,SDM2014-122
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue