Presentation 2014-12-12
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Katsuya KITO, Hisashi HAYASHI, Shuhei KITAJIMA, Tokiyoshi MATSUDA, Mutsumi KIMURA,
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Abstract(in English) We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si TFTs. We measured I-V characteristics of N-type, P-type, PIN-type poly-Si TFTs, and confirmed temperature dependence of off-current is larger than that of on-current. Here, we measured the frequency characteristics of hybrid-type temperature sensors that combined a 1T1C-type circuit and ring oscillator, and compared their characteristics. As a result, we confirmed temperature dependences of each circuit, and it is applicable as a temperature sensor.
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Keyword(in English) Poly-Si TFT / Hybrid-type temperature sensor / Frequency characteristic / Temperature dependence
Paper # EID2014-24,SDM2014-119
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
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Title (in English) Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Sub Title (in English)
Keyword(1) Poly-Si TFT
Keyword(2) Hybrid-type temperature sensor
Keyword(3) Frequency characteristic
Keyword(4) Temperature dependence
1st Author's Name Katsuya KITO
1st Author's Affiliation Department of Electronics and Informatics, Ryukoku University()
2nd Author's Name Hisashi HAYASHI
2nd Author's Affiliation Department of Electronics and Informatics, Ryukoku University
3rd Author's Name Shuhei KITAJIMA
3rd Author's Affiliation Department of Electronics and Informatics, Ryukoku University
4th Author's Name Tokiyoshi MATSUDA
4th Author's Affiliation Department of Electronics and Informatics, Ryukoku University
5th Author's Name Mutsumi KIMURA
5th Author's Affiliation Department of Electronics and Informatics, Ryukoku University
Date 2014-12-12
Paper # EID2014-24,SDM2014-119
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue